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Damage formation and annealing studies of low energy ion implants ...

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ackscattering (27). This fact forms the basis <strong>of</strong> the sensitivity <strong>of</strong> MEIS to lattice<br />

damage <strong>and</strong> implanted dopants in non lattice sites.<br />

a) b)<br />

Figure 4.5 a) Shadow cone produced by a surface atom. b) Ions steered into the open<br />

channel. From (5).<br />

If the sample is aligned to the beam on its inward path, this situat<strong>ion</strong> is called<br />

shadowing. Addit<strong>ion</strong>ally data can be recorded along a direct<strong>ion</strong> <strong>of</strong> a crystallographic<br />

axis on the exit path <strong>and</strong> this is called blocking, it gives a further increase in surface<br />

sensitivity. The configurat<strong>ion</strong> <strong>of</strong> combined shadowing <strong>and</strong> blocking is known as double<br />

alignment.<br />

Channelled particles can become dechannelled when undergoing deflect<strong>ion</strong>s<br />

larger than the critical angle. Displaced atoms within a channel, e.g. point defects,<br />

stacking faults, dislocat<strong>ion</strong> loops <strong>and</strong> amorphous zones, can cause such deflect<strong>ion</strong>s <strong>of</strong><br />

the <strong>ion</strong>s (forward scattering), which then cause the <strong>ion</strong> to be backscattered from deeper<br />

within the sample. Figure 4.6a) illustrates dechannelling, in comparison to channelling<br />

<strong>and</strong> backscattering. Amorphous layers cause dechannelling <strong>of</strong> the collimated beam, as<br />

illustrated in Figure 4.6b). Dechannelling results in a higher background scattering<br />

yield.<br />

a) b)<br />

Figure 4.6 a) Schematic illustrat<strong>ion</strong>s <strong>of</strong> particles undergoing dechannelling, channelling <strong>and</strong><br />

backscattering. b) Illustrat<strong>ion</strong> <strong>of</strong> the divergence <strong>of</strong> a collimated beam through an amorphous<br />

layer, which results in a high level <strong>of</strong> dechannelling. From (4).<br />

74

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