23.03.2013 Views

Damage formation and annealing studies of low energy ion implants ...

Damage formation and annealing studies of low energy ion implants ...

Damage formation and annealing studies of low energy ion implants ...

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

they are small compared to the differences due to the scattering cross sect<strong>ion</strong>s. With the<br />

r<strong>and</strong>om yield typically 375 counts, representing a concentrat<strong>ion</strong> <strong>of</strong> 5 × 10 22 cm -3 Si<br />

atoms, then displaced Si can be detected down to ~ 1 × 10 20 cm -3 <strong>and</strong> As to 1×10 19 cm -3 .<br />

A correct<strong>ion</strong> has to be applied to account for the different <strong>energy</strong> widths that peaks <strong>of</strong><br />

the different elements have on the <strong>energy</strong> scale. The heavier the element, the greater<br />

<strong>energy</strong> range that equates to a fixed depth. Stated differently ∆E/∆z is larger for higher<br />

masses <strong>and</strong> hence energies. The variat<strong>ion</strong> is usually less than 10% but needs to be<br />

accounted for (4). It can be most convenient to calculate the number <strong>of</strong> dopant atoms on<br />

the basis <strong>of</strong> the depth scale.<br />

The effect <strong>of</strong> neutralisat<strong>ion</strong> should be considered when using an electrostatic<br />

analyser, as neutrals cannot be detected (1). Analysis <strong>of</strong> data taken at the MEIS facility<br />

at the FOM institute (NL), carried out at Daresbury Laboratory, would suggest that<br />

there was little variat<strong>ion</strong> in neutral fract<strong>ion</strong> for different elements at the energies used in<br />

MEIS (48), which was contrary to other findings (44). The measured results showed<br />

that the neutral fract<strong>ion</strong> varied with the velocity <strong>of</strong> the <strong>ion</strong> leaving the sample, being<br />

<strong>low</strong>er at <strong>low</strong>er energies. The amount <strong>of</strong> variat<strong>ion</strong> was small over the <strong>energy</strong> range <strong>of</strong> a<br />

MEIS spectrum (48). The implicat<strong>ion</strong>s for the dose calculat<strong>ion</strong> would therefore appear<br />

to be not particularly significant. This is supported by a comparison <strong>of</strong> the results <strong>of</strong><br />

MEIS dose calibrat<strong>ion</strong> with results <strong>of</strong> RBS measurements carried out at the University<br />

<strong>of</strong> Salford, using a surface barrier detector, which detects neutrals. Good agreement to<br />

within 3% was obtained.<br />

4.2.1.6 Crystallography – Channelling, shadowing, blocking <strong>and</strong> dechannelling<br />

By changing the orientat<strong>ion</strong> <strong>of</strong> a Si crystal the number <strong>of</strong> atoms “visible” to the<br />

beam can be altered. Alignment along crystallographic planes produces so called open<br />

channels. Atoms deeper within the crystal effectively become invisible, as illustrated in<br />

Figure 4.4. The number <strong>of</strong> visible atoms is reduced from the initial r<strong>and</strong>om orientat<strong>ion</strong>,<br />

to a planar alignment, <strong>and</strong> further reduct<strong>ion</strong> as the model is axially aligned along the<br />

[110] direct<strong>ion</strong> on the right.<br />

72

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!