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Damage formation and annealing studies of low energy ion implants ...

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Bragg’s rule (21). Although this rule is reasonably accurate, measured values <strong>of</strong><br />

stopping <strong>of</strong> <strong>ion</strong>s in compounds can deviate from this, usually by less than 20%. Bragg’s<br />

rule ignores changes in orbital <strong>and</strong> excitat<strong>ion</strong> structure between elements <strong>and</strong><br />

compounds. Any bonding changes may alter the charge density, thus changing the<br />

strength <strong>of</strong> the interact<strong>ion</strong> <strong>of</strong> the <strong>ion</strong> with the target medium (20). Data outputs from<br />

SRIM are available for many compounds based on measurements <strong>and</strong> theory.<br />

In every sample studied in this thesis there was an oxide layer on the surface <strong>of</strong><br />

the sample. The stopping power <strong>of</strong> He in SiO2, as obtained from SRIM, is also shown in<br />

Figure 4.1. The stopping power is approximately 1 eV/Å <strong>low</strong>er than that in Si for the<br />

beam energies used. Oxide layer widths are usually 1.5 – 2 nm which equates to a 0.1-<br />

0.2 nm depth deviat<strong>ion</strong> in the depths scale from using the values <strong>of</strong> pure Si.<br />

A small deviat<strong>ion</strong> arises <strong>of</strong> the stopping powers in an open channel compared to<br />

that in a r<strong>and</strong>om direct<strong>ion</strong> (22, 23, 24, 25). The level <strong>of</strong> deviat<strong>ion</strong> depends on the<br />

orientat<strong>ion</strong> <strong>and</strong> <strong>energy</strong>, e.g. for the direct<strong>ion</strong> the channels are more open than the<br />

channel <strong>and</strong> hence the stopping powers are ~ 20% <strong>low</strong>er (22). For He in Si in the<br />

direct<strong>ion</strong> the stopping powers have been found to be ~ 93% <strong>of</strong> that <strong>of</strong> the r<strong>and</strong>om<br />

direct<strong>ion</strong> (22). For the experiments in this thesis most work is primarily concerned with<br />

damaged or amorphous layers <strong>and</strong> hence changes in stopping powers do not need<br />

correcting for.<br />

4.2.1.3 Convers<strong>ion</strong> <strong>of</strong> <strong>energy</strong> scale to depth<br />

Different methods can be applied to calculate the depth scales in MEIS (4). Two<br />

approaches have been used in this project <strong>and</strong> these are described in sect<strong>ion</strong> 4.2.1.4 <strong>and</strong><br />

later in sect<strong>ion</strong> 4.2.3.3. The first method uses a constant value for the inelastic stopping<br />

power along the inward path <strong>and</strong> a different constant value along the outward path<br />

fol<strong>low</strong>ing scattering. There are several places to choose the stopping power values <strong>and</strong><br />

in this project values were chosen at the surface <strong>and</strong> directly after scattering. This<br />

method is termed the surface approximat<strong>ion</strong>. Variat<strong>ion</strong>s on this method also exist,<br />

choosing for example, some average value <strong>of</strong> the stopping power at some depth within<br />

the sample. These types <strong>of</strong> method are valid as the changes in stopping powers are small<br />

over the depths used in MEIS. They are convenient <strong>and</strong> provide the easiest starting<br />

point to explain how the depth scale may be calibrated.<br />

The other approach used in this project is the use <strong>of</strong> a numerical solut<strong>ion</strong> using a<br />

computer program, <strong>and</strong> this was written as part <strong>of</strong> the project. In this method the<br />

instantaneous rate <strong>of</strong> inelastic <strong>energy</strong> loss is recalculated along the <strong>ion</strong> path. It<br />

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