Damage formation and annealing studies of low energy ion implants ...

Hall effect measurements were carried out at the University of Surrey using the van der
Pauw technique (7, 8, 45).
The implants used for the study reported in Chapter 5 of this thesis, were
performed either at the University of Salford using the Salford ultra low energy (ULE)
implanter (11), or at Applied Materials, Horsham (UK) using an Applied Materials
Quantum implanter (12). The samples reported on in section 6.2.2 were also implanted
at the University of Salford. All other implants were performed at AMD, Dresden
(Germany), using Applied Materials Quantum implanters (12). Annealing was carried
out at Salford using a Steag AST10 rapid thermal processor, or at AMD using an
Applied Materials RTP Radiance system.
In this chapter the MEIS technique is described in most detail, since it is the
main technique used, in section 4.2. SIMS is briefly described in section 4.3.
Information regarding all other analysis techniques is given in section 4.4. Sample
preparation, including information on implantation and annealing equipment, is
described in section 4.5.
4.2 MEIS
4.2.1 MEIS Introduction and basic principles
The predominant use of MEIS is “perhaps” for surface crystallography studies
and a review of the application of MEIS to these types of studies is given in (1). Typical
studies include determination of the surface structure of reconstructed surfaces and alloy
phases, and layer-by-layer compositional analysis (13, 14, 15). On the other hand MEIS
can also be used very effectively for depth profiling (16, 17, 18, 19), as is the case in
these studies. The application of MEIS relating to depth profiling is described in this
section.
In MEIS samples are bombarded with a monoenergetic, collimated H + or He +
beam with an energy in the range from 50 to 400 keV. The incident ions are scattered
elastically by single collisions with atoms in the sample and this results in a spread of
energies and scattering angles depending on the details of each collision. The energy of
a scattered particle leaving the sample depends on the elastic and inelastic energy loss
processes that have taken place within the sample. Elastic energy loss is due to the
collision between the nuclei, which depends on the mass ratio of the incident ion to
target atom and the scattering angle. This is described in section 2.2 and the
implications for MEIS are given in section 4.2.1.1.
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