Damage formation and annealing studies of low energy ion implants ...
Damage formation and annealing studies of low energy ion implants ... Damage formation and annealing studies of low energy ion implants ...
47 C. W. Nieh and L. J. Chen, Appl. Phys. Lett. 48, 1528 (1986). 48 C. H. Chu and L. J. Chen, Nucl. Instr. Methods Phys. Res. 59/60, 391 (1991). 49 J.S. Williams, R.G. Elliman, Nucl. Instr. Methods 182/183 (1981) 389. 50 F. Spaepen, Acta Metall. 26 (1978) 1167. 51 T. Saito, I. Ohdomari. Phil. Mag. B 43 (1981) 673. 52 F. Spaepen, D. Turnbull, in: Laser Annealing of Semiconductors, eds. J.M. Poate, and J.W. Mayer, Academic Press, New semiconductors, eds. J.M. Poate, and J.W. Mayer, Academic Press, New York, (1982), pp 15 – 42. 53 L. Csepregi, E.F. Kennedy, J. W. Mayer, T. W. Sigmon. J. Appl. Phys. 49 (1978) 3906. 54 J.W. Corbett, J.P.Karins, T.Y. Tan, Nucl. Inst. Meth. 182/183, 1981, p457 55 N. E. B. Cowern, G. Mannino, P.A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, M. Jaraíz, Phys. Rev. Lett., 82, 4460 (1999). 56 N. Cowern, B Colombeau, A. Claverie, C. Bonofas, B. de Maudit, F. Cristiano, E. Scheid. Presentation at Applied Materials University collaborations Workshop. October 2002. 57 F. Cristiano, N. Cherkashin, X. Hebras, P.Calvo, Y. Lamrani, E. Scheid, B. de Mauduit, B. Colombea, W. Lerch, S. Paul, A. Claverie, Nucl. Inst. Meth. B 216 (2004) 46. 58 D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, J.M. Poate, Appl. Phys. Lett. 65 (1994) 2305. 59 A.Claverie, L.F. Giles, M. Omri, B. de Mauduit, G. Ben Assayag, D. Mathiot Nucl. Inst. Meth. B 147 (1999) 1. 60 L. Capello, PhD thesis. Structural investigation of silicon after ion-implantation using combined x-ray scattering methods. University of Lyon (France) and Torino (Italy), 2005. 61 P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraiz, J.M. Poate, J. Appl. Phys. 81 (1997) 6031. 62 G. Faraci, A.R. Pennisi, A. Terrasi and S. Mobilio, Phys. Rev B 38, 13 468 (1988) 63 P. Resesz, M. Wittmer, J. Roth and J. W. Mayer, J. Appl. Phys. 49, 5199 (1978). 64 M. Wittmer, J. Roth, P. Resesz, and J. W. Mayer, J. Appl. Phys. 49, 5207 (1978). 65 A. G. Cullis, T. E. Seidel and R. L. Meek, J. Appl. Phys. 49, 5188 (1978). 66 S.M. Hu. Mat. Sci. Eng. R13 (1994) 105 – 192. 61
67 H. Bracht. Diffusion Mechanism and Intrinsic Point-defect properties in Si. MRS bulletin June 2000. 68 R.B. Fair. Concentration profiles of diffused dopants in Si. Chapter 7 in Impurity Doping processes in Si, North-Holland, New York, 1981. 69 S. Whelan. PhD thesis, University of Salford, 2001 70 W. Lerch. M.Glück, N.A. Stolwijk, H. Walk, M. Schäfer, S.D. Marcus, D.F. Downey, J.W. Chow, H. Marquardt, Proc. Mat. Res. Soc. Vol 525 (1998). 71 H.-J. Gossmann, T.E. Hayes, P.A. Stolk, D.C. Jacobson, G.H. Gilmer, J.M. Poate, H.S. Luftman, T.K. Mogi, M.O. Thompson, Appl. Phys. Lett. 71 (1997) 3862. 72 N.E.B. Cowern, D. Alquier, M. Omri, A. Claverie, A. Nejim, Nucl. Inst. Meth. B 148 (1999) 257. 73 C. Bonafos, D. Mathiot, A. Claverie, J. Appl. Phys. 83 (1998) 3008. 62
- Page 29 and 30: produces a device quality regrown l
- Page 31 and 32: technique of channelling Rutherford
- Page 33 and 34: 22 J.S Williams. Solid Phase Recrys
- Page 35 and 36: and the probability of scattering t
- Page 37 and 38: importance for many atomic collisio
- Page 39 and 40: M1, V0, E0 Figure 2.2 Elastic scatt
- Page 41 and 42: 2.3.1 Models for inelastic energy l
- Page 43 and 44: dE/dx (ev/Ang) 10 1 Inelastic Energ
- Page 45 and 46: dE/dx (eV/Ang) 125 100 75 50 25 0 2
- Page 47 and 48: Figure 2.5 Results of TRIM simulati
- Page 49 and 50: Chapter 3 Damage and Annealing proc
- Page 51 and 52: the Si/SiO2 interface, consuming th
- Page 53 and 54: On the basis that by creating an in
- Page 55 and 56: Figure 3.4 Structure of crystalline
- Page 57 and 58: a Si atom will suffer little angula
- Page 59 and 60: 3.2.2.5 Homogeneous model (Critical
- Page 61 and 62: Sputtering and atomic mixing play a
- Page 63 and 64: and is approximately 25 times faste
- Page 65 and 66: elevant dopants later. For equal co
- Page 67 and 68: nearest neighbour distance (52). By
- Page 69 and 70: Category I defects are produced whe
- Page 71 and 72: thermal annealing (600 - 700 °C an
- Page 73 and 74: Figure 3.11 Relationship between im
- Page 75 and 76: defect pairs due to Coulomb attract
- Page 77 and 78: ⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
- Page 79: 27 R.D. Goldberg, J. S. Williams, a
- Page 83 and 84: Hall effect measurements were carri
- Page 85 and 86: energy than one scattered from an a
- Page 87 and 88: epresents a small improvement over
- Page 89 and 90: (dE/dx)out multiplied by the path l
- Page 91 and 92: they are small compared to the diff
- Page 93 and 94: ackscattering (27). This fact forms
- Page 95 and 96: Figure 4.7 a) Plot of a Gaussian di
- Page 97 and 98: similar to the width of the error f
- Page 99 and 100: UP Ion Beam SPIN Rotation Sample Sc
- Page 101 and 102: Kinematic factor (K) 1.0 0.8 0.6 0.
- Page 103 and 104: Figure 4.14 Illustration of the dou
- Page 105 and 106: 4.2.2.4 Interpretation of spectra A
- Page 107 and 108: with are comparatively small, ~ 0.5
- Page 109 and 110: Inelastic energy loss (eV/Ang) 32 2
- Page 111 and 112: iterative procedure is carried out
- Page 113 and 114: Yield (couts per 5µC) 300 250 200
- Page 115 and 116: SIMS experiments were also carried
- Page 117 and 118: MEIS, using the scattering conditio
- Page 119 and 120: 4.5 Sample production Samples have
- Page 121 and 122: an N2/O2 environment to maintain an
- Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
- Page 125 and 126: damage evolution behaviour observed
- Page 127 and 128: Yield (counts per 5 µC) 250 200 15
- Page 129 and 130: essentially a “zero dose” profi
67 H. Bracht. Diffus<strong>ion</strong> Mechanism <strong>and</strong> Intrinsic Point-defect properties in Si. MRS<br />
bulletin June 2000.<br />
68 R.B. Fair. Concentrat<strong>ion</strong> pr<strong>of</strong>iles <strong>of</strong> diffused dopants in Si. Chapter 7 in Impurity<br />
Doping processes in Si, North-Holl<strong>and</strong>, New York, 1981.<br />
69 S. Whelan. PhD thesis, University <strong>of</strong> Salford, 2001<br />
70 W. Lerch. M.Glück, N.A. Stolwijk, H. Walk, M. Schäfer, S.D. Marcus, D.F.<br />
Downey, J.W. Chow, H. Marquardt, Proc. Mat. Res. Soc. Vol 525 (1998).<br />
71 H.-J. Gossmann, T.E. Hayes, P.A. Stolk, D.C. Jacobson, G.H. Gilmer, J.M. Poate,<br />
H.S. Luftman, T.K. Mogi, M.O. Thompson, Appl. Phys. Lett. 71 (1997) 3862.<br />
72 N.E.B. Cowern, D. Alquier, M. Omri, A. Claverie, A. Nejim, Nucl. Inst. Meth. B<br />
148 (1999) 257.<br />
73 C. Bonafos, D. Mathiot, A. Claverie, J. Appl. Phys. 83 (1998) 3008.<br />
62
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