Damage formation and annealing studies of low energy ion implants ...

Figure 3.11 Relationship between implantation dose and annealing, on the type of
defects formed.
Figure 3.12 Schematic two-dimensional representations of direct diffusion
mechanisms of an element A in a solid, via a) interstitial lattice sites and
b) substitutional lattice sites.
Figure 3.13 Schematic two-dimensional representation of indirect diffusion
mechanisms of an element A in a solid. Ai, As, V, and I denote
interstitially and substitutionally dissolved foreign atoms, vacancies, and
silicon self-interstitials, respectively. AV and AI are defect pairs of the
corresponding defects.
Figure 4.1 Inelastic energy loss rates as a function of energy for H in Si and He in
Si and SiO2.
Figure 4.2 MEIS scattering configuration.
Figure 4.3 Graph of the inelastic energy loss rates, indicating how the energy loss
values used in the surface approximation (blue lines) differs slightly
from reality (green lines).
Figure 4.4 Different orientations of a Si Crystal. Randomly oriented, planar aligned,
and aligned along the [110] direction.
Figure 4.5 a) Shadow cone produced by a surface atom. b) Ions steered into the
open channel.
Figure 4.6 a) Schematic illustrations of particles undergoing dechannelling,
channelling and backscattering. b) Illustration of the divergence of a
collimated beam through an amorphous layer, which results in a high
level of dechannelling.
Figure 4.7 a) Plot of a Gaussian distribution b) The error function in MEIS spectra
is typically of the form of the integral of the Gaussian distribution. The
standard deviation is indicated.
Figure 4.8 The effects of energy straggling and the system resolution. For an ideal
profile a), energy straggling causes a broadening of the low energy edge
b). The system resolution causes a broadening of both the leading and
low energy edges c).
Figure 4.9 The effect of convoluting different ideal peak shapes with a single
Gaussian function. a) A layer that is wide compared to the width of the
Gaussian. b) A very thin layer. c) A layer with a width similar to the
Gaussian. d) An interface with a broad energy distribution.
Figure 4.10 Illustration of the Daresbury MEIS facility.
Figure 4.11 MEIS Azimuthal alignment axes.
Figure 4.12 MEIS analyser and detector scattering configuration.
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