Damage formation and annealing studies of low energy ion implants ...

contain no stacking fault, but faulted dislocation loops have a stacking fault in the {111}
plane (59), as illustrated in Figure 3.10.
Figure 3.10 Structure of a) faulted dislocation loops and b) perfect dislocation loops.
Faulted dislocation loops contain a {111} stacking fault. From (60).
Dislocation loops (perfect and faulted) act as nucleation sites for Si interstitials
released from {113} defects during annealing at temperatures of 800 °C and above. This
is termed a conservative Ostwald ripening process. The density of the dislocation loops
will increase while the density of the {113} defects will decrease by a similar amount
(73). For temperatures of 1000 °C and greater, perfect dislocation loops start to
dissociate leaving large highly stable faulted dislocation loops that will be stable at
1050 °C. A PDL can act as a sink for a {113} defect and a source for FDL at the same
time (57). The dependence of the formation of the different types of defects on the
implantation dose is illustrated in Figure 3.11.
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