Damage formation and annealing studies of low energy ion implants ...

List of Figures
Figure 1.1 a) Schematic of a MOS transistor. b) XTEM image of an AMD
optimised transistor with a gate length of 35 nm.
Figure 1.2 Number of transistors on Intel Microprocessors.
Figure 1.3 Roadmap for device shrinkage at AMD with XTEM of test structures.
Figure 2.1 Scattering into a solid angle.
Figure 2.2 Elastic scattering configuration.
Figure 2.3 Electronic stopping powers for H and He ions in Si. The positions
corresponding to the Thomas Fermi velocity are indicated, along with the
energy regimes where different models for the stopping powers are
applicable.
Figure 2.4 Electronic and Nuclear stopping powers for He and As in Si. The energy
regimes used in MEIS and for the implants are indicated.
Figure 2.5 Results of TRIM simulations showing the trajectories of 20 a) 3 keV As
ions and b) 3 keV B ions, implanted into Si.
Figure 3.1 Si unit cell.
Figure 3.2 Si (100), (110) and (111) planes.
Figure 3.3 Schematic of different defect types, i.e. a) vacancy, b) di-vacancy, c) self
interstitial, d) interstitialcy, e) impurity interstitial, f) substitutional
impurity, g) impurity vacancy pair, h) impurity self interstitial pair.
Figure 3.4 Structure of crystalline Si (left) showing the 6 ring structure and
amorphous Si (right) where the 5 and 7 ring structure is visible.
Figure 3.5 Illustration of location of damage formed by a) heavy and b) light ions
Figure 3.6 SPER rates for Si (100), (110) and (111).
Figure 3.7 Schematic representation of SPER of Si(100) in terms of kink (BB’)
generation and motion along [110] ledges (AA’).
Figure 3.8 The relationship between the damage density distribution (solid lines)
and amorphisation threshold (dashed line) leading to the different
categories of defect.
Figure 3.9 TEM images of defects present in the EOR damage area of ion implanted
Si. These are clusters, {113}s, PDLs, and FDLs.
Figure 3.10 Structure of a) faulted dislocation loops and b) perfect dislocation loops.
Faulted dislocation loops contain a {111} stacking fault.
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