Damage formation and annealing studies of low energy ion implants ...

4.5 Sample production 100
4.5.1 Salford Ultra Low Energy Implanter Laboratory 100
4.5.2 Annealing equipment 101
References 102
Chapter 5 Damage accumulation and dopant migration during
shallow As and Sb implantation. 105
5.1 Introduction 105
5.2 Experimental 106
5.3 Results and discussion 107
5.4 Conclusion 116
References 116
Chapter 6 Annealing studies 118
6.1 Introduction 118
6.2 Studies involving RTA of implanted samples,
conditions similar to current device production 119
6.2.1 Introduction 119
6.2.2 RTA of 2.5 keV As implanted samples 119
6.2.2.1 Experimental 119
6.2.2.2 Results and Discussion 120
6.2.3 PAI 3keV As implanted samples 123
6.2.3.1 MEIS results 124
6.2.3.2 Comparison with SIMS 127
6.2.3.3 Specular reflectivity (SR) results – comparison with MEIS 129
6.2.4 Reduction in implant energy – 1 keV As implantation and annealing 132
6.2.4.1 Experimental 132
6.2.4.2 Results and Discussion 133
6.2.5 BF2 implanted samples 138
6.3 SPER studies 138
6.3.1 Introduction 138
6.3.2 Isothermal and Isochronal series 139
6.3.2.1 Isothermal series 139
6.3.2.2 Isochronal series 146
6.3.3 MEIS and XRD study of SPER on Cz and Epi 3 keV As,
comparison of the two techniques 150
6.3.3.1 MEIS 150
6.3.3.2 X-ray Techniques 152
6.3.3.3 Comparison between MEIS and x-ray scattering results 154
6.4 SOI regrowth 156
6.4.1 Introduction 156
6.4.2 Experimental 157
6.4.3 Results 157
6.4.3.1 No – PAI samples 157
6.4.3.2 60nm SOI PAI (40 keV Xe) 3 keV As 1E15 158
6.4.3.3 Bulk Si, 60, 100 nm SOI, PAI, 3 and 1 keV BF2 162
6.4.3.4 88 nm SOI vs. bulk Si, PAI Xe 40 keV 1E14, As 3 keV 2E15 163
6.4.4 Discussion 165
6.5 Conclusion 170
References 170
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