Damage formation and annealing studies of low energy ion implants ...

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References 1 Chason et al. J. Appl. Phys., Vol 81, No 10, 15 May 1997, p 6513 – 6561. 2 Physics of Semiconductor devices, Second edition, S.M. Sze, John Wiley and Sons, New York, 1981. 3 Modern Semiconductor Device Physics, Edited S.M. Sze, John Wiley and Sons, New York, 1998. 4 Semiconductor devices physics and technology, S.M. Sze, John Wiley and Sons, New York, 1985. 5 Ion Implantation Science and Technology. 2000 Edition. Edited by J. F. Ziegler, Ion Implantation Company, 2000. 6 Electronic Materials Science For Integrated Circuits in Si and GaAs. J.W. Mayer, S.S. Lau. Macmillian Publishing Company, 1990. 7 Introductory Semiconductor Device Physics. G. Parker, Prentice Hall, 1994. 8 Wolf S., Silicon Processing for the VLSI Era, Volume 2 – Process integration, Chapter 5, Lattice Press, 1990. 9 T. Feudel, M. Horstman, D. Greenlaw, Advanced annealing for µP Technologies, oral presentation at IMPULSE project meeting, 11th October 2004, Dresden, DE. 10 Electronics, Volume 38, Number 8, April 19, 1965 11 G. E. Moore, “Progress in Digital Integrated Electronics.” IEEE Technical Digest 1975. International Electron Devices Meeting, IEEE, 1975, pp. 11-13. 12 http://www.intel.com/technology/silicon/mooreslaw/ and pages within (accessed 14/2/05). 13 http://public.itrs.net/ (accessed 18/2/05) 14 M. Horstman et al. Mat. Sci. Eng. B 114 – 115 (2004) p3 – 8. 15 T. Ghani, et al., VLSI Tech. Digest (2000). 16 T. Feudel, M. Horstmann, M. Gerhardt, M. Herden, L. Herrmann, D. Gehre, C. Krueger, D. Greenlaw, M. Raab, Mater. Sci. Semicond. Proces., 7, (2004), 369. 17 A. Erebach, T. Feudal, A. Schenk, C. Zechner. Mat. Sci. Eng. B 114 – 115 (2004) p15 – 19. 18 K. Rim, et al., IEDM Tech. Digest (2003) 49. 19 Ion Implantation of Semiconductors, G. Carter, W.A. Grant, Arnold, 1976. 20 L. Pelaz, L.A. Marqués, J. Barbolla, Journal of Appl. Phys. 96 (2004) 5947. 21 P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61 (1989) 289. 13
22 J.S Williams. Solid Phase Recrystallisation process in Silicon. Chapter 5, p 133, in Surface modification and alloying by laser, ion and electron beams, Editors J.M. Poate, G. Forti and D.C. Jacobson, Plenum, 1983. 23 J A van den Berg, D G Armour, M Werner, S Whelan, W Vandervorst and T Clarysse, E H J Collart and R D Goldberg, P Bailey and T C Q Noakes, Proc. Int. Conf. on Ion Implantation Technology, ITT2002, September 2002, p597 24 A. Claverie, L.F. Giles, M. Omri, B. de Maudit, G. Ben Assayag, D. Mathiot. Nucl. Inst. Meth. B 147 (1999) 1. 25 C. Bonafos, D. Mathiot, A. Claverie, Journal of Appl. Phys. 83 (1998) 3008. 26 E.C. Jones, E. Ishida, Mat. Sci. and Eng. R24 (1998) 1. 27 http://www.imm.cnr.it/imm/progetti/projects/impulse/impulse_home.html (Accessed 01/12/03) 28 R. D. Goldberg et al. Rev Sci Instrum. Vol 71, Number 2, Feb 2000 p1032. 29 http://www.amat.com/products/quantum.html (Accessed 03/06/03) 30 www.dl.ac.uk/MEIS (accessed 10/12/03) 31 Rapid Thermal Processing of Semiconductors. V. E. Borisenko, P. Hesketh. Plenum Press, 1997. 32 H. Wong, H. Iwai, Physics World, Vol 18, No 9, Sept 2005, p 40. 33 H. Iwai, Solid State Electronics, 48 (2004) 497. 14
Page 1 and 2: Damage formation and annealing stud
Page 3 and 4: 3.2.2.6 Other models 40 3.2.3 Other
Page 5 and 6: Chapter 7 Interaction between Xe, F
Page 7 and 8: List of Figures Figure 1.1 a) Schem
Page 9 and 10: Figure 4.13 Variation in the kinema
Page 11 and 12: Figure 6.10 MEIS energy spectra for
Page 13 and 14: Figure 7.8 Combined MEIS Xe depth p
Page 15 and 16: Abbreviations and Symbols a/c amorp
Page 17 and 18: Abstract The work described in this
Page 19 and 20: Chapter 7 5 M. Werner, J.A. van den
Page 21 and 22: terminal (Vg), current cannot flow
Page 23 and 24: This is an approximate average leve
Page 25 and 26: the active channel, adjacent to the
Page 27 and 28: To continue to improve devices ther
Page 29 and 30: produces a device quality regrown l
Page 31: technique of channelling Rutherford
Page 35 and 36: and the probability of scattering t
Page 37 and 38: importance for many atomic collisio
Page 39 and 40: M1, V0, E0 Figure 2.2 Elastic scatt
Page 41 and 42: 2.3.1 Models for inelastic energy l
Page 43 and 44: dE/dx (ev/Ang) 10 1 Inelastic Energ
Page 45 and 46: dE/dx (eV/Ang) 125 100 75 50 25 0 2
Page 47 and 48: Figure 2.5 Results of TRIM simulati
Page 49 and 50: Chapter 3 Damage and Annealing proc
Page 51 and 52: the Si/SiO2 interface, consuming th
Page 53 and 54: On the basis that by creating an in
Page 55 and 56: Figure 3.4 Structure of crystalline
Page 57 and 58: a Si atom will suffer little angula
Page 59 and 60: 3.2.2.5 Homogeneous model (Critical
Page 61 and 62: Sputtering and atomic mixing play a
Page 63 and 64: and is approximately 25 times faste
Page 65 and 66: elevant dopants later. For equal co
Page 67 and 68: nearest neighbour distance (52). By
Page 69 and 70: Category I defects are produced whe
Page 71 and 72: thermal annealing (600 - 700 °C an
Page 73 and 74: Figure 3.11 Relationship between im
Page 75 and 76: defect pairs due to Coulomb attract
Page 77 and 78: ⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
Page 79 and 80: 27 R.D. Goldberg, J. S. Williams, a
Page 81 and 82: 67 H. Bracht. Diffusion Mechanism a
Page 83 and 84:
Hall effect measurements were carri
Page 85 and 86:
energy than one scattered from an a
Page 87 and 88:
epresents a small improvement over
Page 89 and 90:
(dE/dx)out multiplied by the path l
Page 91 and 92:
they are small compared to the diff
Page 93 and 94:
ackscattering (27). This fact forms
Page 95 and 96:
Figure 4.7 a) Plot of a Gaussian di
Page 97 and 98:
similar to the width of the error f
Page 99 and 100:
UP Ion Beam SPIN Rotation Sample Sc
Page 101 and 102:
Kinematic factor (K) 1.0 0.8 0.6 0.
Page 103 and 104:
Figure 4.14 Illustration of the dou
Page 105 and 106:
4.2.2.4 Interpretation of spectra A
Page 107 and 108:
with are comparatively small, ~ 0.5
Page 109 and 110:
Inelastic energy loss (eV/Ang) 32 2
Page 111 and 112:
iterative procedure is carried out
Page 113 and 114:
Yield (couts per 5µC) 300 250 200
Page 115 and 116:
SIMS experiments were also carried
Page 117 and 118:
MEIS, using the scattering conditio
Page 119 and 120:
4.5 Sample production Samples have
Page 121 and 122:
an N2/O2 environment to maintain an
Page 123 and 124:
38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126:
damage evolution behaviour observed
Page 127 and 128:
Yield (counts per 5 µC) 250 200 15
Page 129 and 130:
essentially a “zero dose” profi
Page 131 and 132:
no longer “visible” in MEIS has
Page 133 and 134:
yield (cts / 5µC) 500 400 300 200
Page 135 and 136:
5.4 Conclusion MEIS analysis with a
Page 137 and 138:
Chapter 6 Annealing studies 6.1 Int
Page 139 and 140:
6.2.2.2 Results and Discussion Figu
Page 141 and 142:
theory predictions and X-ray fluore
Page 143 and 144:
implantation conditions are those u
Page 145 and 146:
a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148:
greater than MEIS. SIMS is not sens
Page 149 and 150:
attributed to the interference betw
Page 151 and 152:
The as-implanted sample, with a bro
Page 153 and 154:
a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156:
interface, as evidenced by the high
Page 157 and 158:
duration, is observed. MEIS results
Page 159 and 160:
Yield (counts per 5µC) 500 400 300
Page 161 and 162:
ack edges of the Si peaks are very
Page 163 and 164:
underneath the SiO2 layer, iii) it
Page 165 and 166:
R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168:
As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170:
R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172:
Following annealing it was observed
Page 173 and 174:
∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176:
Yield (counts per 5 uC) 350 300 250
Page 177 and 178:
(FWHM). Concomitantly, As in the re
Page 179 and 180:
Page 181 and 182:
The higher temperature anneals carr
Page 183 and 184:
ecomes steeper for the sample annea
Page 185 and 186:
Figure 6.28 Schematic illustrations
Page 187 and 188:
and the 2D picture in Figure 6.31b)
Page 189 and 190:
6.5 Conclusion In summary, in this
Page 191 and 192:
20 L. Capello, T. H. Metzger, M. We
Page 193 and 194:
egarding B profiles relevant to the
Page 195 and 196:
Page 197 and 198:
TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 199 and 200:
a) F profile PAI 3 keV BF2 b) F pro
Page 201 and 202:
Yield (counts per 5 µC) 20 15 10 5
Page 203 and 204:
the corresponding PAI sample, yield
Page 205 and 206:
amorphous matrix, (16) i.e. local c
Page 207 and 208:
21 M. Anderle, M. Bersani, D. Giube
Page 209 and 210:
stopped at depths beyond the observ
Page 211:
the role of each individual element
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