Damage formation and annealing studies of low energy ion implants ...

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enhanced diffusion of the implanted dopant ions, many orders of magnitude higher than standard Fickian diffusion called transient enhanced diffusion (TED). Diffusion can limit the shallowness of the transistor junction produced and consequently has important implications for device production. Pre-amorphisation is also carried out to minimise channelling of implanted dopant ions (26). Traditionally amorphisation has been carried out using Ge implants but in the studies in this thesis Xe has been predominantly used. Using a deeper preamorphising implant (PAI) can spatially separate the end of range damage from the junction depth. 1.5 Objective, preparation, analysis techniques and equipment The objective of the studies reported in this thesis was to investigate near surface damage formation and regrowth processes as well as the behaviour of dopant ions implanted into silicon during ultra low energy ion implantation and annealing. The focus was to study conditions typical for forming ultra shallow junctions (USJ’s), for source / drains and extensions. Implant and annealing conditions are similar to those used in actual device production (i.e. 3keV BF2 and As). However a particular interest was to gain a better understanding of the mechanisms involved using detailed structural characterisation of the as-implanted and annealed Si. For this reason there is special emphasis on using lower annealing temperatures to capture the various stages of regrowth which cannot be identified under production annealing conditions. The work formed part of a European project, IMPULSE (27), the project aims of which were to get a complete physical and electrical characterisation of implants and to identify the optimum implantation and anneal process conditions for the latest generation transistors. The work was performed in close collaboration with Advanced Micro Devices (AMD) in Dresden, Germany. Additional work has been carried out in close collaboration with Applied Materials Implant Division, part of one of the largest equipment manufacturers in the semiconductor industry. Implanted and annealed samples used in this project have been produced at The University of Salford using the Ultra Low Energy Implanter (28), by AMD, in Dresden as part of the IMPULSE project (27), and by Applied Materials Ltd. Both AMD and Applied Materials used Applied Materials Quantum LEAP implanters (29). The main analysis technique used for the characterisation of the samples was medium energy ions scattering (MEIS). In essence a high resolution variation of the 11
technique of channelling Rutherford Backscattering Spectrometry (RBS/C), MEIS is able to provide depth profiles of both the dopant and the damaged Si with sub nm depth resolution. Experiments were carried out at the CCLRC facility at Daresbury Laboratory (30). Additionally, secondary ion mass spectrometry (SIMS) measurements were carried out for a comparison with MEIS experiments, forming the basis of the analysis. 1.6 Scope of the project A review of atomic collisions in solids is contained in chapter 2. Chapter 3 reviews damage formation and annealing in ion implanted Si. Chapter 4 reviews the analysis techniques, primarily focusing on MEIS. It also includes information on sample production including information regarding the implantation and annealing equipment. In chapter 5 the results of the Si damage build up and dopant migration during implantation with increasing implant doses are discussed. These studies were carried out using As and Sb ions. Damage was found to build up in a narrow layer underneath the oxide layer, with increasing implant dose. This would grow to slightly greater depths until a narrow amorphous layer was formed. The width of the amorphous layer would be subsequently increased for increased implantation dose. The location of the implanted dopant was closely related to the depth of the damaged layer. The dopant appeared to be more easily accommodated within the damaged layer. This effect is attributed to mobile interstitials being trapped at the surface sink. Chapter 6 is concerned with aspects of Si regrowth and dopant behaviour following annealing. The studies involved mainly As implants, along with the use of Xe as a pre-amorphising implant. Different types of annealing method, i.e. standard furnace annealing, rapid thermal annealing and spike annealing (31) have been carried out. The studies are focused on using annealing conditions that are typically used in production and lower temperatures in the range 550 °C to 700 °C to study SPER. A study is also included comparing SPER on bulk Si with silicon on insulator (SOI) substrates. An intriguing interaction between Xe, used to pre-amorphise the Si, and F and B from the BF2 implant is described in chapter 7. Some of the implanted X, F and B have been observed to accumulate at depths of around the end of range of the BF2 implant into the amorphous Si. 12
Page 1 and 2: Damage formation and annealing stud
Page 3 and 4: 3.2.2.6 Other models 40 3.2.3 Other
Page 5 and 6: Chapter 7 Interaction between Xe, F
Page 7 and 8: List of Figures Figure 1.1 a) Schem
Page 9 and 10: Figure 4.13 Variation in the kinema
Page 11 and 12: Figure 6.10 MEIS energy spectra for
Page 13 and 14: Figure 7.8 Combined MEIS Xe depth p
Page 15 and 16: Abbreviations and Symbols a/c amorp
Page 17 and 18: Abstract The work described in this
Page 19 and 20: Chapter 7 5 M. Werner, J.A. van den
Page 21 and 22: terminal (Vg), current cannot flow
Page 23 and 24: This is an approximate average leve
Page 25 and 26: the active channel, adjacent to the
Page 27 and 28: To continue to improve devices ther
Page 29: produces a device quality regrown l
Page 33 and 34: 22 J.S Williams. Solid Phase Recrys
Page 35 and 36: and the probability of scattering t
Page 37 and 38: importance for many atomic collisio
Page 39 and 40: M1, V0, E0 Figure 2.2 Elastic scatt
Page 41 and 42: 2.3.1 Models for inelastic energy l
Page 43 and 44: dE/dx (ev/Ang) 10 1 Inelastic Energ
Page 45 and 46: dE/dx (eV/Ang) 125 100 75 50 25 0 2
Page 47 and 48: Figure 2.5 Results of TRIM simulati
Page 49 and 50: Chapter 3 Damage and Annealing proc
Page 51 and 52: the Si/SiO2 interface, consuming th
Page 53 and 54: On the basis that by creating an in
Page 55 and 56: Figure 3.4 Structure of crystalline
Page 57 and 58: a Si atom will suffer little angula
Page 59 and 60: 3.2.2.5 Homogeneous model (Critical
Page 61 and 62: Sputtering and atomic mixing play a
Page 63 and 64: and is approximately 25 times faste
Page 65 and 66: elevant dopants later. For equal co
Page 67 and 68: nearest neighbour distance (52). By
Page 69 and 70: Category I defects are produced whe
Page 71 and 72: thermal annealing (600 - 700 °C an
Page 73 and 74: Figure 3.11 Relationship between im
Page 75 and 76: defect pairs due to Coulomb attract
Page 77 and 78: ⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
Page 79 and 80: 27 R.D. Goldberg, J. S. Williams, a
Page 81 and 82:
67 H. Bracht. Diffusion Mechanism a
Page 83 and 84:
Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
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Yield (couts per 5µC) 300 250 200
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SIMS experiments were also carried
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MEIS, using the scattering conditio
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4.5 Sample production Samples have
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an N2/O2 environment to maintain an
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38 M. Anderle, M. Barozzi, M. Bersa
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damage evolution behaviour observed
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Yield (counts per 5 µC) 250 200 15
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essentially a “zero dose” profi
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no longer “visible” in MEIS has
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yield (cts / 5µC) 500 400 300 200
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5.4 Conclusion MEIS analysis with a
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Chapter 6 Annealing studies 6.1 Int
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6.2.2.2 Results and Discussion Figu
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theory predictions and X-ray fluore
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implantation conditions are those u
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a) b) c) Yield (counts per 5 µC) Y
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greater than MEIS. SIMS is not sens
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attributed to the interference betw
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The as-implanted sample, with a bro
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a) b) Yield (counts per 5 µC) Yiel
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interface, as evidenced by the high
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duration, is observed. MEIS results
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Yield (counts per 5µC) 500 400 300
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ack edges of the Si peaks are very
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underneath the SiO2 layer, iii) it
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R s (Ω/sq) 950 900 850 800 750 60
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As concentration (at/cm 3 ) 1E22 1E
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R s (Ω/sq) 950 900 850 800 750 70
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Following annealing it was observed
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∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
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Yield (counts per 5 uC) 350 300 250
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(FWHM). Concomitantly, As in the re
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Page 181 and 182:
The higher temperature anneals carr
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ecomes steeper for the sample annea
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Figure 6.28 Schematic illustrations
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and the 2D picture in Figure 6.31b)
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6.5 Conclusion In summary, in this
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20 L. Capello, T. H. Metzger, M. We
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egarding B profiles relevant to the
Page 195 and 196:
Page 197 and 198:
TRIM AU 0.04 0.03 0.02 0.01 TRIM si
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a) F profile PAI 3 keV BF2 b) F pro
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Yield (counts per 5 µC) 20 15 10 5
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the corresponding PAI sample, yield
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amorphous matrix, (16) i.e. local c
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21 M. Anderle, M. Bersani, D. Giube
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stopped at depths beyond the observ
Page 211:
the role of each individual element
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