Damage formation and annealing studies of low energy ion implants ...

3.2.2.6 Other models 40
3.2.3 Other implantation effects 41
3.2.3.1 Sputtering 41
3.2.3.2 Atomic mixing 41
3.2.3.3 Range shortening 42
3.3 Annealing 42
3.3.1 Introduction 42
3.3.2 Solid phase epitaxial regrowth (SPER) 43
3.3.2.1 Intrinsic Si 43
3.3.2.2 Dopant and other impurity Atoms 45
3.3.2.3 Models for SPER 47
3.3.3 Random Nucleation and growth (RNG) 49
3.3.4 Annealing ambient considerations 49
3.4 Defects after annealing and evolution during annealing 49
3.4.1 Classification of Defects 49
3.4.2 End of Range defects and their evolution upon annealing 51
3.4.3 Bubbles 54
3.5 Dopant movement and Diffusion 55
3.5.1 Introduction 55
3.5.2 Models of diffusion 55
3.5.2.1 Standard Fickian diffusion 57
3.5.2.2 Transient enhanced diffusion 58
References 58
Chapter 4 Experimental Techniques and sample preparation 63
4.1 Introduction 63
4.2 MEIS 64
4.2.1 MEIS Introduction and basic principles 64
4.2.1.1 Mass sensitivity – elastic collisions 65
4.2.1.2 Depth sensitivity and inelastic energy loss 65
4.2.1.3 Conversion of energy scale to depth 67
4.2.1.4 Surface Approximation method 68
4.2.1.5 Dose and concentration calculations 70
4.2.1.6 Crystallography – Channelling, shadowing, blocking
and dechannelling 72
4.2.1.7 Energy straggling and system resolution, resulting in a
convolution of the peaks with Gaussian distributions 75
4.2.2 Experimental 78
4.2.2.1 MEIS system 78
4.2.2.2 Experimental Parameters 81
4.2.2.3 Experimental output 85
4.2.2.4 Interpretation of spectra 86
4.2.3 Improvements to methodology 87
4.2.3.1 Stopping powers 88
4.2.3.2 Determination of beam energy 90
4.2.3.3 Numerical solution to depth scale 91
4.2.3.4 Changes to the data acquisition 95
4.3 SIMS introduction and basic principles 95
4.4 Other analysis techniques used 98
4.4.1 X-ray techniques 98
4.4.2 TEM 98
4.4.3 Electrical measurements 99
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