2 S. P.Jeng, T. P. Ma, R. Canteri, M. Anderle <strong>and</strong> G. W. Rubl<strong>of</strong>f, Appl. Phys. Lett. 61, 1310 (1992). 3 D. F. Downey, J. W. Chow, E. Ishida <strong>and</strong> K. S. Jones, Appl. Phys. Lett. 73, 1263 (1998). 4 M. Y. Tsai, D. S. Day, B. D. Streetman, P. Williams <strong>and</strong> C. A. Evans, Jr, J. Appl. Phys. 50, 188 (1979). 5 F. Boussaid, M. Benzohra, F. Olivie, D. Alquier <strong>and</strong> A. Martinez Nucl. Instr. Methods Phys. Res. B 134, 195 (1998). 6 M. Tamura, Y. Hiroyama <strong>and</strong> A. Nishida. Mat. Chem. <strong>and</strong> Phys. 54, 23 (1998). 7 A. Mokhberi, R. Kasnavi, P. B. Griffin <strong>and</strong> J. D. Plummer, Appl. Phys. Lett. 80, 3530 (2002). 8 N. Ohno, T. Hara, Y. Matsunaga, M. Current <strong>and</strong> M. Inoue. Mat. Sci. in Semicond. Processing 3, 221 (2000). 9 C. W. Nieh <strong>and</strong> L. J. Chen, Appl. Phys. Lett. 48, 1528 (1986). 10 C. H. Chu <strong>and</strong> L. J. Chen, Nucl. Instr. Methods Phys. Res. 59/60, 391 (1991). 11 C. H. Chu, J. J. Yang <strong>and</strong> L. J. Chen, Nucl. Instr. Methods Phys. Res. B 74, 138 (1993). 12 G. Faraci, A.R. Pennisi, A. Terrasi <strong>and</strong> S. Mobilio, Phys. Rev B 38, 13 468 (1988) 13 P. Resesz, M. Wittmer, J. Roth <strong>and</strong> J. W. Mayer, J. Appl. Phys. 49, 5199 (1978). 14 M. Wittmer, J. Roth, P. Resesz, <strong>and</strong> J. W. Mayer, J. Appl. Phys. 49, 5207 (1978). 15 A. G. Cullis, T. E. Seidel <strong>and</strong> R. L. Meek, J. Appl. Phys. 49, 5188 (1978). 16 S. Roorda, J. S. Custer, W. C. Sinke, J. M. Poate, D. C. Jacobson, A. Polman <strong>and</strong> F. Spaepen, Nucl. Instr. Methods Phys. Res. B 59/60, 344 (1991). 17 J. A. van den Berg, D. G. Armour, S Zhang <strong>and</strong> S Whelan, L.Wang <strong>and</strong> A. G. Cullis, E. H. J. Collart, R. D. Goldberg, P. Bailey <strong>and</strong> T. C. Q. Noakes, J. Vac. Sci. Technol. B 20, 974 (2002). 18 M. Werner, J. A. van den Berg, D. G. Armour, W. V<strong>and</strong>ervorst, E. H. J. Collart, R. D. Goldberg, P. Bailey, T. C. Q. Noakes. Nucl. Instr. Methods Phys. Res. B 216, 67 (2004). 19 J. F. Ziegler, J. P. Biersack, <strong>and</strong> U. Littmark, The Stopping <strong>and</strong> Range <strong>of</strong> Ions in Solids (Pergamon Press, New York, 1985). 20 W. K. Chu, J. W. Mayer, M. Nicolet, Backscattering Spectrometry, (Academic Press, New York, 1978). 187
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
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Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
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To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
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Yield (couts per 5µC) 300 250 200
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SIMS experiments were also carried
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MEIS, using the scattering conditio
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4.5 Sample production Samples have
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an N2/O2 environment to maintain an
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38 M. Anderle, M. Barozzi, M. Bersa
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damage evolution behaviour observed
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Yield (counts per 5 µC) 250 200 15
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essentially a “zero dose” profi
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no longer “visible” in MEIS has
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yield (cts / 5µC) 500 400 300 200
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5.4 Conclusion MEIS analysis with a
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Chapter 6 Annealing studies 6.1 Int
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6.2.2.2 Results and Discussion Figu
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theory predictions and X-ray fluore
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implantation conditions are those u
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a) b) c) Yield (counts per 5 µC) Y
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greater than MEIS. SIMS is not sens
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attributed to the interference betw
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The as-implanted sample, with a bro
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a) b) Yield (counts per 5 µC) Yiel
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- Page 157 and 158: duration, is observed. MEIS results
- Page 159 and 160: Yield (counts per 5µC) 500 400 300
- Page 161 and 162: ack edges of the Si peaks are very
- Page 163 and 164: underneath the SiO2 layer, iii) it
- Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
- Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
- Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
- Page 171 and 172: Following annealing it was observed
- Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
- Page 175 and 176: Yield (counts per 5 uC) 350 300 250
- Page 177 and 178: (FWHM). Concomitantly, As in the re
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- Page 185 and 186: Figure 6.28 Schematic illustrations
- Page 187 and 188: and the 2D picture in Figure 6.31b)
- Page 189 and 190: 6.5 Conclusion In summary, in this
- Page 191 and 192: 20 L. Capello, T. H. Metzger, M. We
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- Page 197 and 198: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
- Page 199 and 200: a) F profile PAI 3 keV BF2 b) F pro
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