Damage formation and annealing studies of low energy ion implants ...

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Concentration [at/cm 3 ] 10 22 10 21 10 20 10 19 a) b) PAI - 1 keV BF 2 as-implanted 600C 20m 1000C 5s 1025C 10s 1050C spike 30 Si 10 7 10 6 10 5 10 4 10 3 10 2 10 1 10 0 5 10 15 20 25 30 18 10 Depth [nm] 0 counts/s Concentration [at/cm 3 ] 10 0 5 10 15 20 25 30 18 10 Depth [nm] 0 Figure 7.6 shows combined depth profiles of Xe (from MEIS) and F (from SIMS), for as-implanted, 600 °C 20 min, 1000 °C 5 s and spike annealed at 1130 °C or 1050 °C sample, for both 3 keV and 1 keV BF2 implants. The figure illustrates the close link between the Xe and F. For some anneal conditions (e.g. 3keV BF2 + 1130 °C) the relative concentrations of Xe to F would appear to be ~ 1:1, but there are some minor deviations with different samples, notably the high temperature 1 keV samples. 10 22 10 21 10 20 10 19 181 No PAI - 1 keV BF 2 as-implanted 600C 20m 1000C 5s 1025C 10s 1050C spike Figure 7.5 1 keV SIMS profiles for a) PAI samples and b) non-PAI samples. 30 Si 10 7 10 6 10 5 10 4 10 3 10 2 10 1 counts/s
Yield (counts per 5 µC) 20 15 10 5 0 20 15 10 5 0 20 15 10 5 0 20 15 10 5 20 keV Xe, 3keV BF 2 F - as-implanted Xe - as-implanted F - 600C 20m Xe - 600C 20m F - 1000C 5s Xe - 1000C 5s F - 1130C spike Xe - 1130C spike 20 keV Xe, 1 keV BF 2 Figure 7.7a) shows SIMS B depth profiles for the 3 keV BF2 implants into crystalline and pre-amorphised Si, as-implanted, after 600 °C 20m, 1000 °C 5s RTA, and 1130 °C spike annealing. For the as-implanted sample the effect of channelling is visible at depths greater than 10 nm. Annealing causes several effects. Segregation of B to the surface occurs in all samples. Diffusion deeper into the bulk occurs for the 1000 °C and 1130 °C samples, the higher temperature causing a greater amount of diffusion. Using 1E18cm -3 as a reference concentration for the junction depth gives a junction at 43 nm and around 60 nm for the 1000 °C and 1130 °C samples respectively. 182 F - as-implanted Xe - as-implanted F - 600C 20m Xe - 600C 20m F - 1000C 5s Xe - 1000C 5s F - 1050C spike Xe - 1050C spike 2.0x10 20 1.5x10 20 1.0x10 20 5.0x10 19 0.0 2.0x10 20 1.5x10 20 1.0x10 20 5.0x10 19 0.0 2.0x10 20 1.5x10 20 1.0x10 20 5.0x10 19 0.0 0 0.0 0 2 4 6 8 101214160246810 12 14 16 Depth (nm) 2.0x10 20 1.5x10 20 1.0x10 20 5.0x10 19 Figure 7.6 Combined MEIS Xe depth profiles and SIMS F depth profiles for Xe preamorphised samples implanted with 3 keV BF2 + (left) and 1 keV BF2 (right), as-implanted and after various anneals. Concentration (atoms cm -3 )
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
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Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
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To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
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Yield (couts per 5µC) 300 250 200
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SIMS experiments were also carried
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MEIS, using the scattering conditio
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4.5 Sample production Samples have
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an N2/O2 environment to maintain an
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38 M. Anderle, M. Barozzi, M. Bersa
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damage evolution behaviour observed
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Yield (counts per 5 µC) 250 200 15
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essentially a “zero dose” profi
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no longer “visible” in MEIS has
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yield (cts / 5µC) 500 400 300 200
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5.4 Conclusion MEIS analysis with a
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Chapter 6 Annealing studies 6.1 Int
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6.2.2.2 Results and Discussion Figu
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theory predictions and X-ray fluore
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implantation conditions are those u
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a) b) c) Yield (counts per 5 µC) Y
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greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172: Following annealing it was observed
Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 179 and 180: Yield (counts per 5 µC) 450 400 35
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
Page 185 and 186: Figure 6.28 Schematic illustrations
Page 187 and 188: and the 2D picture in Figure 6.31b)
Page 189 and 190: 6.5 Conclusion In summary, in this
Page 191 and 192: 20 L. Capello, T. H. Metzger, M. We
Page 193 and 194: egarding B profiles relevant to the
Page 195 and 196: Yield (counts per 5 µC) 400 300 20
Page 197 and 198: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 199: a) F profile PAI 3 keV BF2 b) F pro
Page 203 and 204: the corresponding PAI sample, yield
Page 205 and 206: amorphous matrix, (16) i.e. local c
Page 207 and 208: 21 M. Anderle, M. Bersani, D. Giube
Page 209 and 210: stopped at depths beyond the observ
Page 211: the role of each individual element
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