Damage formation and annealing studies of low energy ion implants ...

Concentration [at/cm 3 ]
10 22
10 21
10 20
10 19
a) b)
PAI - 1 keV BF 2
as-implanted
600C 20m
1000C 5s
1025C 10s
1050C spike
30 Si
10 7
10 6
10 5
10 4
10 3
10 2
10 1
10
0 5 10 15 20 25 30
18
10
Depth [nm]
0
counts/s
Concentration [at/cm 3 ]
10
0 5 10 15 20 25 30
18
10
Depth [nm]
0
Figure 7.6 shows combined depth profiles of Xe (from MEIS) and F (from
SIMS), for as-implanted, 600 °C 20 min, 1000 °C 5 s and spike annealed at 1130 °C or
1050 °C sample, for both 3 keV and 1 keV BF2 implants. The figure illustrates the close
link between the Xe and F. For some anneal conditions (e.g. 3keV BF2 + 1130 °C) the
relative concentrations of Xe to F would appear to be ~ 1:1, but there are some minor
deviations with different samples, notably the high temperature 1 keV samples.
10 22
10 21
10 20
10 19
181
No PAI - 1 keV BF 2
as-implanted
600C 20m
1000C 5s
1025C 10s
1050C spike
Figure 7.5 1 keV SIMS profiles for a) PAI samples and b) non-PAI samples.
30 Si
10 7
10 6
10 5
10 4
10 3
10 2
10 1
counts/s