Damage formation and annealing studies of low energy ion implants ...

Contents
List of Tables vi
List of Figures vii
Acknowledgements xiv
Abbreviations and Symbols xv
Abstract xvii
Publications xviii
Chapter 1 Introduction 1
1.1 Introduction 1
1.2 CMOS Devices 1
1.3 Ion implantation 8
1.4 Annealing 9
1.5 Objective, preparation, analysis techniques and equipment 11
1.6 Scope of the project 12
References 13
Chapter 2 Atomic collision in solids 15
2.1 Introduction 15
2.2 Elastic energy loss / Nuclear Stopping 16
2.2.1 Scattering cross section 18
2.2.2 The Kinematic Factor 19
2.2.3 Energy transferred in elastic collisions 21
2.3 Inelastic energy loss / Electronic stopping 21
2.3.1 Models for inelastic energy loss 22
2.3.2 Summary of General trends in the inelastic energy loss curve 23
2.3.3 Experimentally obtained stopping powers 24
2.3.4 Difference in stopping powers in open channels 24
2.3.5 Correlation between stopping and screening 25
2.3.6 Example of relevant nuclear and electronic stopping powers 25
2.4 Ion range 26
2.4.1 Range calculation 26
2.4.2 Simulation of ion implantation (using TRIM) 27
2.4.3 Channelling of the ions 28
References 28
Chapter 3 Damage and Annealing processes 30
3.1 Introduction 30
3.1.1 Si crystal structure and its properties 30
3.2 Implantation induced defects, damage build-up and amorphisation 32
3.2.1.1 Atomic displacement 32
3.2.1.2 Point defects 32
3.2.1.3 Point defect migration and secondary defects
formed prior to annealing 34
3.2.1.4 Dynamic annealing 35
3.2.2 Amorphisation 35
3.2.2.1 Structure of amorphous Si 35
3.2.2.2 Ion implantation amorphisation 36
3.2.2.3 Collision Cascades, produced by single heavy and light ions 36
3.2.2.4 Heterogeneous amorphisation (overlap model) 39
3.2.2.5 Homogeneous model (Critical defects model) 40
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