Damage formation and annealing studies of low energy ion implants ...

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peak gives a dose of 1.2E14 cm -2 – 1.7E14 cm -2 which is between 9 - 12 % of the implanted F. The dose measured by SIMS suggests total dose retention. F appears to be trapped at the oxide interface. For the non-PAI samples in Figure 7.4b), the as-implanted sample displays a slight channelling tail and is otherwise the same as the PAI sample. For samples annealed at high temperatures the F migration to the surface is also observed. However the deeper migration observed with PAI samples does not occur in non PAI samples. The only variation is with the sample annealed at 600 °C, in which a double peak is observed. The second peak is centred around a depth of 7-8 nm. This behaviour is not too unusual and can be attributed to trapping of some F around the original a/c interface which is consistent with previous studies (4). The MEIS profile in Figure 7.4c) indicates the depth of the original a/c interface around 7 – 8 nm which is indeed consistent with the F trapping result. Returning to the PAI samples in figure 7.4a), it is worth mentioning that the second deeper damage peak at 12 – 13 nm cannot be attributed to trapping at the original a/c interface, which is much deeper in the PAI samples. 179
a) F profile PAI 3 keV BF2 b) F profiles noPAI 3keV BF2 1E22 1E21 1E20 1E19 0 5 10 15 20 25 30 c) Depth (nm) 450 400 350 300 250 200 150 100 50 0 as-implanted 600C 20m 950C 20s 1000C 5s 1025C 10s 1130 spike Cs + @ 1keV 3kV extraction 10 7 10 6 10 5 10 4 For 1 keV BF2 samples the general behaviour is like that of the 3 keV samples and the results are shown in Figure 7.5. For the PAI samples in Figure 7.5a) deeper migration of F occurs forming a second peak centred around 7 nm, as well as the migration to the surface. For non PAI samples, shown in Figure 7.5b), there is no second peak and only migration to the surface occurs. The trapping of F at the depth of the original a/c interface, seen with the 600 °C 3 keV non PAI sample in Figure 7.4b), has not occurred with the 1 keV samples. 1E22 1E21 1E20 Si depth (nm) 15 10 5 0 a/c interface 7 - 8 nm 180 as-implanted 600C 20m 1000C 5s 1025C 10s 1E19 0 5 10 15 20 25 30 Depth (nm) 70 75 80 85 90 95 Energy (keV) virgin random 3 kev BF 2 (as implanted) Cs + @ 1keV 3kV extraction Figure 7.4 SIMS F depth profiles for 3 keV BF2 samples, as-implanted and after a variety of anneals in a) PAI samples and b) non-PAI samples. The MEIS profile in c) shows the non-PAI, 3 keV BF2 as-implanted profile. 10 7 10 6 10 5 10 4
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
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Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
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To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
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Yield (couts per 5µC) 300 250 200
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SIMS experiments were also carried
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MEIS, using the scattering conditio
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4.5 Sample production Samples have
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an N2/O2 environment to maintain an
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38 M. Anderle, M. Barozzi, M. Bersa
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damage evolution behaviour observed
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Yield (counts per 5 µC) 250 200 15
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essentially a “zero dose” profi
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no longer “visible” in MEIS has
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yield (cts / 5µC) 500 400 300 200
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5.4 Conclusion MEIS analysis with a
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Chapter 6 Annealing studies 6.1 Int
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6.2.2.2 Results and Discussion Figu
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theory predictions and X-ray fluore
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implantation conditions are those u
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a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172: Following annealing it was observed
Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 179 and 180: Yield (counts per 5 µC) 450 400 35
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
Page 185 and 186: Figure 6.28 Schematic illustrations
Page 187 and 188: and the 2D picture in Figure 6.31b)
Page 189 and 190: 6.5 Conclusion In summary, in this
Page 191 and 192: 20 L. Capello, T. H. Metzger, M. We
Page 193 and 194: egarding B profiles relevant to the
Page 195 and 196: Yield (counts per 5 µC) 400 300 20
Page 197: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 201 and 202: Yield (counts per 5 µC) 20 15 10 5
Page 203 and 204: the corresponding PAI sample, yield
Page 205 and 206: amorphous matrix, (16) i.e. local c
Page 207 and 208: 21 M. Anderle, M. Bersani, D. Giube
Page 209 and 210: stopped at depths beyond the observ
Page 211: the role of each individual element
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