Damage formation and annealing studies of low energy ion implants ...

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4 J.A. van den Berg, D. G. Armour, M. Werner, S. Whelan, W. Vandervorst, T. Clarysse, E. H. J. Collart, R. D. Goldberg, P Bailey, T. C. Q. Noakes. Proc Int Conf. on Ion Implantation Technology (ITT 2002), (Sept 2002), IEEE Operations Center, Piscataway, NJ 08855-1331. p. 597 (2003) 5 J.A. van den Berg, D Armour, S Zhang, S Whelan, M Werner, E.H.J. Collart, R.D. Goldberg, P. Bailey, T.C.Q. Noakes. P303 – 308. Materials Research Society proceeding (MRS) vol 717, Si front end junction formation technologies, San Francisco Ca April 2 – 4 2002. Published MRS, Pennsylvania, USA. 6 P.Pichler, Solid Phase Epitaxy. Unpublished. 7 Solid phase recrystallization processes in silicon,in Surface modification and alloying by laser, ion and electron beams, J. S. Williams, J. M. Poate, G. Foti and D. C. Jacobson, Eds. Plenum, 1983, p. 133-163. 8 J. Dabrowski, H.-J. Mussig, V. Zavodinsky, R. Baierle and, M. J. Caldas, Phys. Rev. B, 65, 245305 (2002) 9 Private communication. P.Pichler. 10 R. Kasnavi, Y. Sun, P. Pianetta, P.G. Griffin, J.D. Plummer. J. Appl. Phys. 87, 2000, p 2255–2260. 11 P. M. Rousseau, P. B. Griffin, W. T. Fang and J D Plummer. J. Appl. Phys. 84, 1998. p. 3593-3601 12 J. A. van den Berg, S. Zhang, S. Whelan, D.G. Armour, R.D. Goldberg, P.Bailey, T.C.Q. Noakes. Nucl. Instr. Methods B. 183 (2001) 154-165. 13 Private communication. T. Feudal, AMD. 14 M. Werner, J. A. van den Berg, D. G. Armour, W. Vandervorst, E. H. J. Collart, R. D. Goldberg, P. Bailey, T. C. Q. Noakes. Nucl. Instr. And Meth B 216 (2004) 67. 15 A H Al-Bayati, K Ormannn- Rossiter, J A van den Berg and D G Armour, Surface Sci 241 (1991) 91. 16 http://www.esrf.fr/UsersAndScience/Experiments/SurfaceScience/ID01/ (accessed 12/1/06). 17 U. Pietsch, V. Holý, T. Baumbach, High-Resolution X-ray Scattering from Thin Films and Lateral Nanostructures, (Spinger, Berlin, 2004). 18 L. Capello, T.H. Metzger, M. Werner, J.A. van den Berg, M. Servidori, M. Herden, T. Feudel. Mat. Sci. and Eng. B 124-125 (2005) 200 – 204. 19 L. Capello, PhD thesis. Structural investigation of silicon after ion-implantation using combined x-ray scattering methods. University of Lyon (France) and Torino (Italy), 2005. 171
20 L. Capello, T. H. Metzger, M. Werner, J. A. van den Berg, M. Servidori, L. Ottaviano, C. Spinella, G. Mannino, T. Feudel, M. Herden. Influence of preamorphization on the structural properties of ultra-shallow arsenic implants in silicon. (To be published). 21 F. A. Trumbore, Bell Syst. Tech. J. 39 (1960) 205. 22 Rapid Thermal Processing of Semiconductors. V. E. Borisenko, P. Hesketh. Plenum Press, 1997. 23 http://www.elecdesign.com/Articles/ArticleID/3400/3400.html (accessed 12/1/06) 24 M. Bruel. Nucl. Instr. and Meth. B 108 (1996) 313. 25 http://www.soitec.com/ (accessed 12/1/06) 26 J.J. Hamilton, E.J.H. Collart, B. Colombea, C. Jeynes, M. Bersani, D. Giubertoni, J.A. Sharp, N.E.B. Cowern, K.J. Kirkby. Nucl. Instr. and Meth. B 237, (2005) 107. 27 M. von Allmen, S.S. Lau, J.W.Mayer, Appl. Phys. Lett. 35 (1979) 280. 28 G.L. Olsen, J.A. Roth, Kinetics of Solid Phase Crystallisation in Amorphous Silicon. Mat. Sci. Rep. 3 (1978) p1-78. 29 D.A. Williams, R.A. McMahon, H. Ahmed. Mat. Sci. and Eng. 4 (1989) 423. 30 Handbook of Semiconductor Silicon Technology. W.C. O’Mara, R.B. Herring, L.P. Hunt, Noyes Publications, New Jersey, 1990. 172
Page 1 and 2:
Damage formation and annealing stud
Page 3 and 4:
3.2.2.6 Other models 40 3.2.3 Other
Page 5 and 6:
Chapter 7 Interaction between Xe, F
Page 7 and 8:
List of Figures Figure 1.1 a) Schem
Page 9 and 10:
Figure 4.13 Variation in the kinema
Page 11 and 12:
Figure 6.10 MEIS energy spectra for
Page 13 and 14:
Figure 7.8 Combined MEIS Xe depth p
Page 15 and 16:
Abbreviations and Symbols a/c amorp
Page 17 and 18:
Abstract The work described in this
Page 19 and 20:
Chapter 7 5 M. Werner, J.A. van den
Page 21 and 22:
terminal (Vg), current cannot flow
Page 23 and 24:
This is an approximate average leve
Page 25 and 26:
the active channel, adjacent to the
Page 27 and 28:
To continue to improve devices ther
Page 29 and 30:
produces a device quality regrown l
Page 31 and 32:
technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
Page 41 and 42:
2.3.1 Models for inelastic energy l
Page 43 and 44:
dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
Page 47 and 48:
Figure 2.5 Results of TRIM simulati
Page 49 and 50:
Chapter 3 Damage and Annealing proc
Page 51 and 52:
the Si/SiO2 interface, consuming th
Page 53 and 54:
On the basis that by creating an in
Page 55 and 56:
Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
Page 89 and 90:
(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
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Yield (couts per 5µC) 300 250 200
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SIMS experiments were also carried
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MEIS, using the scattering conditio
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4.5 Sample production Samples have
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an N2/O2 environment to maintain an
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38 M. Anderle, M. Barozzi, M. Bersa
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damage evolution behaviour observed
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Yield (counts per 5 µC) 250 200 15
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essentially a “zero dose” profi
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no longer “visible” in MEIS has
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yield (cts / 5µC) 500 400 300 200
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5.4 Conclusion MEIS analysis with a
Page 137 and 138:
Chapter 6 Annealing studies 6.1 Int
Page 139 and 140: 6.2.2.2 Results and Discussion Figu
Page 141 and 142: theory predictions and X-ray fluore
Page 143 and 144: implantation conditions are those u
Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172: Following annealing it was observed
Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 179 and 180: Yield (counts per 5 µC) 450 400 35
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
Page 185 and 186: Figure 6.28 Schematic illustrations
Page 187 and 188: and the 2D picture in Figure 6.31b)
Page 189: 6.5 Conclusion In summary, in this
Page 193 and 194: egarding B profiles relevant to the
Page 195 and 196: Yield (counts per 5 µC) 400 300 20
Page 197 and 198: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 199 and 200: a) F profile PAI 3 keV BF2 b) F pro
Page 201 and 202: Yield (counts per 5 µC) 20 15 10 5
Page 203 and 204: the corresponding PAI sample, yield
Page 205 and 206: amorphous matrix, (16) i.e. local c
Page 207 and 208: 21 M. Anderle, M. Bersani, D. Giube
Page 209 and 210: stopped at depths beyond the observ
Page 211: the role of each individual element
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