Damage formation and annealing studies of low energy ion implants ...
Damage formation and annealing studies of low energy ion implants ... Damage formation and annealing studies of low energy ion implants ...
4 J.A. van den Berg, D. G. Armour, M. Werner, S. Whelan, W. Vandervorst, T. Clarysse, E. H. J. Collart, R. D. Goldberg, P Bailey, T. C. Q. Noakes. Proc Int Conf. on Ion Implantation Technology (ITT 2002), (Sept 2002), IEEE Operations Center, Piscataway, NJ 08855-1331. p. 597 (2003) 5 J.A. van den Berg, D Armour, S Zhang, S Whelan, M Werner, E.H.J. Collart, R.D. Goldberg, P. Bailey, T.C.Q. Noakes. P303 – 308. Materials Research Society proceeding (MRS) vol 717, Si front end junction formation technologies, San Francisco Ca April 2 – 4 2002. Published MRS, Pennsylvania, USA. 6 P.Pichler, Solid Phase Epitaxy. Unpublished. 7 Solid phase recrystallization processes in silicon,in Surface modification and alloying by laser, ion and electron beams, J. S. Williams, J. M. Poate, G. Foti and D. C. Jacobson, Eds. Plenum, 1983, p. 133-163. 8 J. Dabrowski, H.-J. Mussig, V. Zavodinsky, R. Baierle and, M. J. Caldas, Phys. Rev. B, 65, 245305 (2002) 9 Private communication. P.Pichler. 10 R. Kasnavi, Y. Sun, P. Pianetta, P.G. Griffin, J.D. Plummer. J. Appl. Phys. 87, 2000, p 2255–2260. 11 P. M. Rousseau, P. B. Griffin, W. T. Fang and J D Plummer. J. Appl. Phys. 84, 1998. p. 3593-3601 12 J. A. van den Berg, S. Zhang, S. Whelan, D.G. Armour, R.D. Goldberg, P.Bailey, T.C.Q. Noakes. Nucl. Instr. Methods B. 183 (2001) 154-165. 13 Private communication. T. Feudal, AMD. 14 M. Werner, J. A. van den Berg, D. G. Armour, W. Vandervorst, E. H. J. Collart, R. D. Goldberg, P. Bailey, T. C. Q. Noakes. Nucl. Instr. And Meth B 216 (2004) 67. 15 A H Al-Bayati, K Ormannn- Rossiter, J A van den Berg and D G Armour, Surface Sci 241 (1991) 91. 16 http://www.esrf.fr/UsersAndScience/Experiments/SurfaceScience/ID01/ (accessed 12/1/06). 17 U. Pietsch, V. Holý, T. Baumbach, High-Resolution X-ray Scattering from Thin Films and Lateral Nanostructures, (Spinger, Berlin, 2004). 18 L. Capello, T.H. Metzger, M. Werner, J.A. van den Berg, M. Servidori, M. Herden, T. Feudel. Mat. Sci. and Eng. B 124-125 (2005) 200 – 204. 19 L. Capello, PhD thesis. Structural investigation of silicon after ion-implantation using combined x-ray scattering methods. University of Lyon (France) and Torino (Italy), 2005. 171
20 L. Capello, T. H. Metzger, M. Werner, J. A. van den Berg, M. Servidori, L. Ottaviano, C. Spinella, G. Mannino, T. Feudel, M. Herden. Influence of preamorphization on the structural properties of ultra-shallow arsenic implants in silicon. (To be published). 21 F. A. Trumbore, Bell Syst. Tech. J. 39 (1960) 205. 22 Rapid Thermal Processing of Semiconductors. V. E. Borisenko, P. Hesketh. Plenum Press, 1997. 23 http://www.elecdesign.com/Articles/ArticleID/3400/3400.html (accessed 12/1/06) 24 M. Bruel. Nucl. Instr. and Meth. B 108 (1996) 313. 25 http://www.soitec.com/ (accessed 12/1/06) 26 J.J. Hamilton, E.J.H. Collart, B. Colombea, C. Jeynes, M. Bersani, D. Giubertoni, J.A. Sharp, N.E.B. Cowern, K.J. Kirkby. Nucl. Instr. and Meth. B 237, (2005) 107. 27 M. von Allmen, S.S. Lau, J.W.Mayer, Appl. Phys. Lett. 35 (1979) 280. 28 G.L. Olsen, J.A. Roth, Kinetics of Solid Phase Crystallisation in Amorphous Silicon. Mat. Sci. Rep. 3 (1978) p1-78. 29 D.A. Williams, R.A. McMahon, H. Ahmed. Mat. Sci. and Eng. 4 (1989) 423. 30 Handbook of Semiconductor Silicon Technology. W.C. O’Mara, R.B. Herring, L.P. Hunt, Noyes Publications, New Jersey, 1990. 172
- Page 139 and 140: 6.2.2.2 Results and Discussion Figu
- Page 141 and 142: theory predictions and X-ray fluore
- Page 143 and 144: implantation conditions are those u
- Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
- Page 147 and 148: greater than MEIS. SIMS is not sens
- Page 149 and 150: attributed to the interference betw
- Page 151 and 152: The as-implanted sample, with a bro
- Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
- Page 155 and 156: interface, as evidenced by the high
- Page 157 and 158: duration, is observed. MEIS results
- Page 159 and 160: Yield (counts per 5µC) 500 400 300
- Page 161 and 162: ack edges of the Si peaks are very
- Page 163 and 164: underneath the SiO2 layer, iii) it
- Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
- Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
- Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
- Page 171 and 172: Following annealing it was observed
- Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
- Page 175 and 176: Yield (counts per 5 uC) 350 300 250
- Page 177 and 178: (FWHM). Concomitantly, As in the re
- Page 179 and 180: Yield (counts per 5 µC) 450 400 35
- Page 181 and 182: The higher temperature anneals carr
- Page 183 and 184: ecomes steeper for the sample annea
- Page 185 and 186: Figure 6.28 Schematic illustrations
- Page 187 and 188: and the 2D picture in Figure 6.31b)
- Page 189: 6.5 Conclusion In summary, in this
- Page 193 and 194: egarding B profiles relevant to the
- Page 195 and 196: Yield (counts per 5 µC) 400 300 20
- Page 197 and 198: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
- Page 199 and 200: a) F profile PAI 3 keV BF2 b) F pro
- Page 201 and 202: Yield (counts per 5 µC) 20 15 10 5
- Page 203 and 204: the corresponding PAI sample, yield
- Page 205 and 206: amorphous matrix, (16) i.e. local c
- Page 207 and 208: 21 M. Anderle, M. Bersani, D. Giube
- Page 209 and 210: stopped at depths beyond the observ
- Page 211: the role of each individual element
4 J.A. van den Berg, D. G. Armour, M. Werner, S. Whelan, W. V<strong>and</strong>ervorst, T.<br />
Clarysse, E. H. J. Collart, R. D. Goldberg, P Bailey, T. C. Q. Noakes. Proc Int<br />
Conf. on Ion Implantat<strong>ion</strong> Technology (ITT 2002), (Sept 2002), IEEE Operat<strong>ion</strong>s<br />
Center, Piscataway, NJ 08855-1331. p. 597 (2003)<br />
5 J.A. van den Berg, D Armour, S Zhang, S Whelan, M Werner, E.H.J. Collart, R.D.<br />
Goldberg, P. Bailey, T.C.Q. Noakes. P303 – 308. Materials Research Society<br />
proceeding (MRS) vol 717, Si front end junct<strong>ion</strong> <strong>format<strong>ion</strong></strong> technologies, San<br />
Francisco Ca April 2 – 4 2002. Published MRS, Pennsylvania, USA.<br />
6 P.Pichler, Solid Phase Epitaxy. Unpublished.<br />
7 Solid phase recrystallizat<strong>ion</strong> processes in silicon,in Surface modificat<strong>ion</strong> <strong>and</strong><br />
alloying by laser, <strong>ion</strong> <strong>and</strong> electron beams, J. S. Williams, J. M. Poate, G. Foti <strong>and</strong><br />
D. C. Jacobson, Eds. Plenum, 1983, p. 133-163.<br />
8 J. Dabrowski, H.-J. Mussig, V. Zavodinsky, R. Baierle <strong>and</strong>, M. J. Caldas, Phys.<br />
Rev. B, 65, 245305 (2002)<br />
9 Private communicat<strong>ion</strong>. P.Pichler.<br />
10 R. Kasnavi, Y. Sun, P. Pianetta, P.G. Griffin, J.D. Plummer. J. Appl. Phys. 87,<br />
2000, p 2255–2260.<br />
11 P. M. Rousseau, P. B. Griffin, W. T. Fang <strong>and</strong> J D Plummer. J. Appl. Phys. 84,<br />
1998. p. 3593-3601<br />
12 J. A. van den Berg, S. Zhang, S. Whelan, D.G. Armour, R.D. Goldberg, P.Bailey,<br />
T.C.Q. Noakes. Nucl. Instr. Methods B. 183 (2001) 154-165.<br />
13 Private communicat<strong>ion</strong>. T. Feudal, AMD.<br />
14 M. Werner, J. A. van den Berg, D. G. Armour, W. V<strong>and</strong>ervorst, E. H. J. Collart, R.<br />
D. Goldberg, P. Bailey, T. C. Q. Noakes. Nucl. Instr. And Meth B 216 (2004) 67.<br />
15 A H Al-Bayati, K Ormannn- Rossiter, J A van den Berg <strong>and</strong> D G Armour, Surface<br />
Sci 241 (1991) 91.<br />
16 http://www.esrf.fr/UsersAndScience/Experiments/SurfaceScience/ID01/ (accessed<br />
12/1/06).<br />
17 U. Pietsch, V. Holý, T. Baumbach, High-Resolut<strong>ion</strong> X-ray Scattering from Thin<br />
Films <strong>and</strong> Lateral Nanostructures, (Spinger, Berlin, 2004).<br />
18 L. Capello, T.H. Metzger, M. Werner, J.A. van den Berg, M. Servidori, M. Herden,<br />
T. Feudel. Mat. Sci. <strong>and</strong> Eng. B 124-125 (2005) 200 – 204.<br />
19 L. Capello, PhD thesis. Structural investigat<strong>ion</strong> <strong>of</strong> silicon after <strong>ion</strong>-implantat<strong>ion</strong><br />
using combined x-ray scattering methods. University <strong>of</strong> Lyon (France) <strong>and</strong> Torino<br />
(Italy), 2005.<br />
171
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