Damage formation and annealing studies of low energy ion implants ...
Damage formation and annealing studies of low energy ion implants ... Damage formation and annealing studies of low energy ion implants ...
Publications The results presented and discussed in the following results chapters of this thesis have been published in the following journals and proceedings. Chapter 5. 1 M. Werner, J.A. van den Berg, D.G. Armour, W. Vandervorst, E.H.J. Collart, R.D. Goldberg, P. Bailey d, T.C.Q. Noakes. Nucl. Instr. and Meth. B 216 (2004) 67–74 Damage accumulation and dopant migration during shallow As and Sb implantation into Si. Chapter 6 2 J.A. van den Berg, D Armour, S Zhang, S Whelan, M Werner, E.H.J. Collart, R.D. Goldberg, P. Bailey, T.C.Q. Noakes. MRS proceeding 2002 vol. 717, P303 – 308. Damage and dopant profiles produced by ultra shallow B and As ion implants into Si at different temperatures characterised by medium energy ion scattering. 3 J A van den Berg, D G Armour, M Werner, S Whelan, W Vandervorst and T Clarysse, E H J Collart and R D Goldberg, P Bailey and T C Q Noakes, Proc. Int. Conf. on Ion Implantation Technology, ITT2002, September 2002, p597 High depth resolution characterization of the damage and annealing behaviour of ultra shallow As implants in Si. 4 L. Capello, T. H. Metzger, M. Werner, J. A. van den Berg, M. Servidori, M. Herden, T. Feudel Mat. Sci. and Eng. B 124-125 (2005) 200 – 204. Solid-Phase Epitaxial Regrowth of a shallow amorphised Si layer studied by x-ray and medium energy ion scattering. xviii
Chapter 7 5 M. Werner, J.A. van den Berg, D.G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubertoni, P. Bailey, T.C.Q. Noakes. Materials Science and Engineering B 114–115 (2004) 198–202. The interaction between Xe and F in Si (100) pre-amorphised with 20 keV Xe and implanted with low energy BF2. 6 M. Werner, J.A. van den Berg, D.G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubertoni, L. Ottaviano, C. Bongiorno, and G. Mannino, P. Bailey, T.C.Q. Noakes. Applied Physics Letters, Volume 86, 2005, P 151904. Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F. xix
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- Page 5 and 6: Chapter 7 Interaction between Xe, F
- Page 7 and 8: List of Figures Figure 1.1 a) Schem
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- Page 11 and 12: Figure 6.10 MEIS energy spectra for
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- Page 15 and 16: Abbreviations and Symbols a/c amorp
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- Page 21 and 22: terminal (Vg), current cannot flow
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Chapter 7<br />
5 M. Werner, J.A. van den Berg, D.G. Armour, G. Carter, T. Feudel, M. Herden, M.<br />
Bersani, D. Giubertoni, P. Bailey, T.C.Q. Noakes. Materials Science <strong>and</strong><br />
Engineering B 114–115 (2004) 198–202.<br />
The interact<strong>ion</strong> between Xe <strong>and</strong> F in Si (100) pre-amorphised with 20 keV Xe <strong>and</strong><br />
implanted with <strong>low</strong> <strong>energy</strong> BF2.<br />
6 M. Werner, J.A. van den Berg, D.G. Armour, G. Carter, T. Feudel, M. Herden, M.<br />
Bersani, D. Giubertoni, L. Ottaviano, C. Bongiorno, <strong>and</strong> G. Mannino, P. Bailey,<br />
T.C.Q. Noakes. Applied Physics Letters, Volume 86, 2005, P 151904.<br />
Shal<strong>low</strong> BF2 <strong>implants</strong> in Xe-bombardment-preamorphized Si: The interact<strong>ion</strong><br />
between Xe <strong>and</strong> F.<br />
xix
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