Damage formation and annealing studies of low energy ion implants ...

6.30b). TRIM calculations show the maximum range of the implant and recoil
interstitials during a 3 keV As implant does not extend beyond a depth of approximately
20 nm. Therefore any damage from the implant should be well away from the buried
oxide interface. MEIS results for the 3 keV As samples showed no significant
differences between the bulk, 60 nm and 100 nm SOI samples, (Figure 6.24). Combined
with the TRIM results this would lead to the conclusion that when the damage is well
away from the BOX and there is a continuous crystalline seed layer the SOI regrowth
proceeds in the same fashion as bulk Si, as also seen in (26).
a)
b)
TRIM (A.U.)
1
0.1
0.01
1E-3
1E-4
3keV As TRIM profiles
0 50 100 150 200 250 300
Depth (Ang)
As ions
Si vacancies
Si interstitials
Red – As ions
Blue – Si Interstitials
Green – O interstitials
Figure 6.30 a) TRIM results for a 3 keV As implant into Si
including vacancy and interstitial profiles. b) Pictorial
representation of the TRIM calculation.
Results of TRIM calculations for a 40 keV Xe implant are shown in Figure 6.31,
likewise the Xe profile and interstitial and vacancy profiles are plotted in Figure 6.31a)
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