Damage formation and annealing studies of low energy ion implants ...

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Intensity [a.u.] 10 6 10 5 10 4 10 3 -0.6 -0.3 0.0 0.3 0.6 q z [A -1 ] These XRD curves have been simulated and the strain profiles and static disorder parameter Lh resulting from the best fits are shown in Figure 6.21 a) and b) respectively. Three regions are observed and are indicated in the figure. 1) A layer at and just below zero depth with positive strain and high static disorder. 2) A central area with no or negative strain accompanied by no static disorder, 3) a deeper layer with high positive strain and low static disorder. The three layers are attributed to the region at the a/c interface, the regrown, electrically active layer and the EOR region respectively. The main features to note with these results are the increases in the width of the recrystallised region in between the EOR region and the surface with increasing anneal temperature. Also after annealing to 650 °C and 700 °C the onset of the negative strain at depths between 1 and 10 nm, is attributed to the As occupying substitutional sites or forming inactive AsnV clusters. 153 epi550 epi600 epi650 epi700 virgin Figure 6.20 Radial scan through (004) Bragg reflection for the Epi series and a virgin sample. From (18, 19).
∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,0 2,5 2,0 epi600 epi650 epi700 1,5 1,0 1) 3) 0,5 0,0 -0,5 -1,0 2) 0 5 10 15 6.3.3.3 Comparison between MEIS and x-ray scattering results Both XRD and MEIS techniques are sensitive to the regrowth of the amorphised Si during the annealing but in different ways. While MEIS measures the disordered Si, XRD is sensitive to the crystalline part of the sample. Figure 6.22 shows a plot of the width of the SPER layer measured by MEIS against that by XRD. There is a linear relationship with a constant offset between the results from the two measurement techniques. It follows that the definition of the reference points, which the regrown layer thickness is measured between, is different for the two techniques but otherwise the results tell the same story. The differences become evident when the details of the measurements are considered. MEIS: Regrown depth (nm) a) 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 Depth in c-Si [nm] Epi 550 C Epi 600 C Epi 650 C Epi 700 C Linear Fit Regrown layer thickness 4.5 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 XRD: Regrown depth (nm) Figure 6.22 Thickness of the regrown layer: comparison between MEIS and XRD results. The constant off-set is due to the different definitions of the start and points for the two techniques. L h 154 1,0 0,8 0,6 0,4 0,2 0,0 epi550 epi600 epi650 epi700 0 5 10 15 Depth in c-Si [nm] Figure 6.21 a) Lattice parameter strain profile in the growth direction resulting from the best fit. b) Static disorder depth profile resulting from the best fit. From (18, 19). b)
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
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Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
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To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
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Yield (couts per 5µC) 300 250 200
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SIMS experiments were also carried
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MEIS, using the scattering conditio
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4.5 Sample production Samples have
Page 121 and 122: an N2/O2 environment to maintain an
Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126: damage evolution behaviour observed
Page 127 and 128: Yield (counts per 5 µC) 250 200 15
Page 129 and 130: essentially a “zero dose” profi
Page 131 and 132: no longer “visible” in MEIS has
Page 133 and 134: yield (cts / 5µC) 500 400 300 200
Page 135 and 136: 5.4 Conclusion MEIS analysis with a
Page 137 and 138: Chapter 6 Annealing studies 6.1 Int
Page 139 and 140: 6.2.2.2 Results and Discussion Figu
Page 141 and 142: theory predictions and X-ray fluore
Page 143 and 144: implantation conditions are those u
Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171: Following annealing it was observed
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
Page 185 and 186: Figure 6.28 Schematic illustrations
Page 187 and 188: and the 2D picture in Figure 6.31b)
Page 189 and 190: 6.5 Conclusion In summary, in this
Page 191 and 192: 20 L. Capello, T. H. Metzger, M. We
Page 193 and 194: egarding B profiles relevant to the
Page 197 and 198: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 199 and 200: a) F profile PAI 3 keV BF2 b) F pro
Page 201 and 202: Yield (counts per 5 µC) 20 15 10 5
Page 203 and 204: the corresponding PAI sample, yield
Page 205 and 206: amorphous matrix, (16) i.e. local c
Page 207 and 208: 21 M. Anderle, M. Bersani, D. Giube
Page 209 and 210: stopped at depths beyond the observ
Page 211: the role of each individual element
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