Damage formation and annealing studies of low energy ion implants ...

Yield (counts per 5µC)
Si depth (nm)
500 16 14 12 10 8 6 4 2 0
400
300
200
100
25
20
15
0
68 70 72 74 76 78 80 82 84 86 88 90 92 94 96
Energy (keV)
SIMS profiles for these samples are shown in Figure 6.16 a) and b). The two
graphs contain the same data set but are plotted with different scales on the axes, as
before. There has not been diffusion deeper into the bulk following these anneals
(Figure 6.16a)). The segregation behaviour of As observed in MEIS is again seen in
SIMS, (Figure 6.16b)).
147
As depth (nm)
Random
as-implanted
600C 10s
650C 10s
700C 10s
14 12 10 8 6 4 2 0
Figure 6.15 100keV He MEIS energy spectra for the [111] blocking direction, for 3keV As
2E15 implanted samples annealed for 10s at 600 °C, 650 °C, and 700 °C.