Damage formation and annealing studies of low energy ion implants ...

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egrown layers. It should be noted that the depth and concentration accuracy of the MEIS profiles in the near surface region is better than the SIMS profiles. As concentration (at/cm 3 ) 1E22 1E21 1E20 1E19 a) 600°C 10s 600°C 20s 600°C 30s 600°C 120s as-implanted b) 1E18 0 10 20 30 Depth (nm) In terms of the electrical activation, Hall effect measurements using the van der Pauw technique have been carried out on these samples, the sheet resistance and activated dose results are shown in Figure 6.14. For the samples that have regrown the sheet resistance is around 750 Ω/□. This value is higher than the requirements currently predicted in the ITRS. 145 600°C 10s 600°C 20s 600°C 30s 600°C 120s 5 10 0 15 Figure 6.13 SIMS results for samples annealed at 600 °C for different durations. 4x10 21 3x10 21 2x10 21 1x10 21 As concentration (at/cm 3 )
R s (Ω/sq) 950 900 850 800 750 600°C anneal sheet resistance activated dose 0 20 40 60 80 100 120 anneal time (s) 6.3.2.2 Isochronal series An isochronal anneal series was produced from the same wafer as the isothermal series. Anneals for 10s duration were carried out at 600 °C, 650 °C and 700 °C. MEIS, SIMS and Hall effect measurements were carried out on these samples with the same conditions as used for the isothermal series. MEIS energy spectra are shown in Figure 6.15. Included in the figure is the random spectrum from an amorphous Si sample and an as-implanted spectrum. Depth scales have been added to the figure for scattering off As and Si. The differences in regrowth rates with temperatures are reflected in the level of regrowth of these samples. The higher anneal temperatures with faster regrowth rates have produced a much fuller regrowth. An interesting feature in the 700 °C sample is a small bump in the Si background level at an energy of 76 keV, equivalent to a depth beyond 12 nm, with the yield scale blown up in the inset. This may correspond to a distortion of the Si lattice around defects in the EOR region. As with all samples the shape of the As peaks is related to the depth of the regrown Si layer. The sample annealed at 700 °C produces a quite well regrown layer, with a small segregated As peak. In fact the spectrum from sample annealed at 700 °C for 10s is very similar to that from the sample annealed at 600 °C for 120s. 146 2.2x10 21 2.0x10 21 1.8x10 21 1.6x10 21 Figure 6.14 Sheet resistance and activated dose for a 600 °C anneal with different anneal durations. activated dose (at/cm 3 )
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
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Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
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To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
Page 113 and 114: Yield (couts per 5µC) 300 250 200
Page 115 and 116: SIMS experiments were also carried
Page 117 and 118: MEIS, using the scattering conditio
Page 119 and 120: 4.5 Sample production Samples have
Page 121 and 122: an N2/O2 environment to maintain an
Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126: damage evolution behaviour observed
Page 127 and 128: Yield (counts per 5 µC) 250 200 15
Page 129 and 130: essentially a “zero dose” profi
Page 131 and 132: no longer “visible” in MEIS has
Page 133 and 134: yield (cts / 5µC) 500 400 300 200
Page 135 and 136: 5.4 Conclusion MEIS analysis with a
Page 137 and 138: Chapter 6 Annealing studies 6.1 Int
Page 139 and 140: 6.2.2.2 Results and Discussion Figu
Page 141 and 142: theory predictions and X-ray fluore
Page 143 and 144: implantation conditions are those u
Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163: underneath the SiO2 layer, iii) it
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172: Following annealing it was observed
Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
Page 185 and 186: Figure 6.28 Schematic illustrations
Page 187 and 188: and the 2D picture in Figure 6.31b)
Page 189 and 190: 6.5 Conclusion In summary, in this
Page 191 and 192: 20 L. Capello, T. H. Metzger, M. We
Page 193 and 194: egarding B profiles relevant to the
Page 197 and 198: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 199 and 200: a) F profile PAI 3 keV BF2 b) F pro
Page 201 and 202: Yield (counts per 5 µC) 20 15 10 5
Page 203 and 204: the corresponding PAI sample, yield
Page 205 and 206: amorphous matrix, (16) i.e. local c
Page 207 and 208: 21 M. Anderle, M. Bersani, D. Giube
Page 209 and 210: stopped at depths beyond the observ
Page 211: the role of each individual element
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