Damage formation and annealing studies of low energy ion implants ...

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Hall effect measurements have been carried out on these samples to find their sheet resistance and the activated dose. The second part of this section uses identical implant conditions and a variety of anneals. This work forms part of a study carried out in a comparison with X-ray techniques at the ESRF to develop X-ray techniques to study defect evolution. The specific techniques used were GI-DXS, SR, and XRD. More information on these techniques and studies can be found in (18-20). MEIS has proved to be particularly useful, providing a basis for the interpretation of some of the X-ray results. It is found that the results obtained from MEIS and XRD are in excellent agreement. 6.3.2 Isothermal and Isochronal series 6.3.2.1 Isothermal series A crystalline Cz Si (100) wafer was implanted with 3 keV As + and a fluence of 2E15 cm -2 . These implant conditions are typical in these studies. The wafer was split into small samples which were annealed at the University of Salford at a temperature of 600 °C for different durations from 5s to 120s. MEIS was carried out with a 100 keV He + beam using the [īīı] channelling direction and the analyser was positioned to record the [332] and [111] blocking directions. Results presented here were taken from the [111] blocking direction. SIMS analysis was carried out using 0.5 keV and 0.25 keV Cs + beams. Additionally Hall effect measurements were carried out on these samples by ITC-IRST staff using the van der Pauw technique and facilities at the University of Surrey. The MEIS energy spectra for the [111] blocking direction is shown in Figure 6.10. Included in the figure is the spectrum from the as-implanted sample and the random level from an amorphous Si sample. Depth scales are indicated on the figure for scattering off Si and As. Depth profiles of Si and As are shown in the top and bottom of Figure 6.11 respectively. 139
Yield (counts per 5µC) 500 400 300 200 100 Si depth (nm) 16 14 12 10 8 6 4 2 0 0 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 Energy (keV) 140 As depth (nm) Random as-impl 600 o C 5s 600 o C 10s 600 o C 20s 600 o C 30s 600 o C 40s 600 o C 60s 600 o C 120s 14 12 10 8 6 4 2 0 Figure 6.10 MEIS energy spectra for 3 keV As implants, as-implanted and after annealing at 600 °C for various times. A random spectra from an amorphous sample is included in the figure. Depth scales have been added to indicate scattering off As and Si atoms.
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
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Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
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To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
Page 107 and 108: with are comparatively small, ~ 0.5
Page 109 and 110: Inelastic energy loss (eV/Ang) 32 2
Page 111 and 112: iterative procedure is carried out
Page 113 and 114: Yield (couts per 5µC) 300 250 200
Page 115 and 116: SIMS experiments were also carried
Page 117 and 118: MEIS, using the scattering conditio
Page 119 and 120: 4.5 Sample production Samples have
Page 121 and 122: an N2/O2 environment to maintain an
Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126: damage evolution behaviour observed
Page 127 and 128: Yield (counts per 5 µC) 250 200 15
Page 129 and 130: essentially a “zero dose” profi
Page 131 and 132: no longer “visible” in MEIS has
Page 133 and 134: yield (cts / 5µC) 500 400 300 200
Page 135 and 136: 5.4 Conclusion MEIS analysis with a
Page 137 and 138: Chapter 6 Annealing studies 6.1 Int
Page 139 and 140: 6.2.2.2 Results and Discussion Figu
Page 141 and 142: theory predictions and X-ray fluore
Page 143 and 144: implantation conditions are those u
Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157: duration, is observed. MEIS results
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172: Following annealing it was observed
Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
Page 185 and 186: Figure 6.28 Schematic illustrations
Page 187 and 188: and the 2D picture in Figure 6.31b)
Page 189 and 190: 6.5 Conclusion In summary, in this
Page 191 and 192: 20 L. Capello, T. H. Metzger, M. We
Page 193 and 194: egarding B profiles relevant to the
Page 197 and 198: TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 199 and 200: a) F profile PAI 3 keV BF2 b) F pro
Page 201 and 202: Yield (counts per 5 µC) 20 15 10 5
Page 203 and 204: the corresponding PAI sample, yield
Page 205 and 206: amorphous matrix, (16) i.e. local c
Page 207 and 208: 21 M. Anderle, M. Bersani, D. Giube
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stopped at depths beyond the observ
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the role of each individual element
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