Damage formation and annealing studies of low energy ion implants ...

can be used without the problem of peak overlap. SIMS analysis was carried out using a
0.5 keV Cs + primary beam, as previously.
6.2.4.2 Results and Discussion
The MEIS energy spectra for the NoPAI samples are shown in Figure 6.7. Depth
scales have been added to the figure to indicate the depth dependence of scattering off
arsenic, silicon and oxygen atoms, respectively. Also included in the figures, for
reference, are spectra from a virgin Si sample and a random spectrum from an
amorphous sample. The energy spectra have also been converted into depth spectra for
As, Si and O for NoPAI and PAI samples and they are shown in Figure 6.8a), b) and c),
respectively. It can be seen that the results of PAI samples are almost identical to the
NoPAI samples.
Yield (counts per 5 µC)
650
600
550
500
450
400
350
300
250
200
150
100
50
O depth (nm)
6 4 2 0
1keV As + 2E15 ion/cm 2 [332] Blocking direction
Si depth nm
12 10 8 6 4 2 0
0
74 76 78 80 82 84 86 88 90 92 94 96
Energy (keV)
133
virgin
Random
1keV as-impl
1keV 600C 20m
1keV 1000C 5s
1keV 1025C 10s
1keV 1050C spike
As depth (nm)
10 8 6 4 2 0
Figure 6.7 MEIS energy spectra for 1 keV As implanted into crystalline Si following
various anneals.