Damage formation and annealing studies of low energy ion implants ...

More documents

Recommendations

Info

Acknowledgements There are many people who I need to thank and acknowledge for their contribution towards this PhD. Firstly I need to thank my supervisor Professor Jaap van den Berg for his help and support throughout the entire time we’ve worked together. Many days and nights have been spent carrying out MEIS experiments and I am grateful to all the staff at Daresbury who have helped along the way, Dr Paul Bailey, Dr Tim Noakes, Dr Kevin Connell, Mark Pendleton, Paul Morrell and Brian Blackwell. I am grateful to everybody who I worked with on the IMPULSE project. In particular to Dr Thomas Feudal, Marc Herden and Daniel Gehre of AMD who provided many implanted samples. The two collaborations that proved to be the most fruitful and enjoyable were with Damiano Giubertoni and Massimo Bersani of ITC – IRST who carried out many of the SIMS measurements presented here, and with Dr Luciana Capello and Dr Till Metzger of the ESRF who carried out the X-ray studies presented here. In addition L. Ottaviano, C. Bongiorno and Dr G. Mannino provided the EFTEM images. Outside of the IMPULSE project Eric Collard and Dr Richard Goldberg of Applied Materials provided Sb implanted samples. Dr Wilfred Vandervorst of IMEC carried out some SIMS experiments. Salvatore Gennaro and Damiano Giubertoni of ITC – IRST have provided the results of Hall effect measurements. I need to thank other PhD students at Salford who I’ve had a lot of fun working with. Andy Wooding, Mike Reading and Jiri Fiala have been a real help, particularly helping out with many late night MEIS/DVD sessions. Phil Edmondson has carried out the XTEM work presented here and has been helpful throughout the PhD in many discussions, as has Kerry Abrams. I am especially grateful to my brother Dave Werner for invaluable help in writing the code for the depth scale program. Professor Dave Armour and Professor Peer Zalm have been very helpful in discussions throughout the project, and have assisted with proof reading the thesis. Dr George Wolstenholme has provided technical assistance and Professor George Carter has made helpful suggestions. Dr Reza Valizeda has helped by carrying out some RBS measurements. Finally I need to thank some friends and my family for many things, including encouragement, support and pretending to be interested in silicon implants. In no particular order, Pete and Lesley Daniel, Mike and Lorna Smith, Matt and Sarah Stuart, Hannah “Cushion” Groves, Melanie Shaw, Dr June Lashley, Clayre Fontaine, Chris Morriss, Mum, Dad and Chloe “Pufa Fish” Werner. xiv
Abbreviations and Symbols a/c amorphous / crystalline AsnV As vacancy cluster BOX buried oxide CMOS complimentary metal oxide semiconductors Cz Si Czochalski grown Si activation energy Eact Ed displacement energy EFTEM energy filtered transmission electron microscopy EOR end of range Epi epitaxially grown Si FDL faulted dislocation loops FWHM full width half maximum GI-DXS grazing incidence – diffuse x-ray scattering IC integrated circuit ITRS international technology roadmap for semiconductors MEIS medium energy ions scattering ML monolayer MOSFET metal oxide field effect transistor NMOS n-channel metal oxide semiconductor PAI pre-amorphising implant PDL perfect dislocation loop PMOS p-channel metal oxide semiconductor RBS Rutherford backscattering spectrometry RBS/C channelling Rutherford backscattering spectrometry RNG random nucleation and growth mean projected range Rp Rs sheet resistance RTA rapid thermal annealing RTP rapid thermal processing SA spike annealing SDE source / drain extensions SIMS secondary ion mass spectrometry SOI silicon on insulator SPER solid phase epitaxial regrowth SR specular reflectivity SRIM stopping and range of ions in matter TED transient enhanced diffusion TEM transmission electron microscopy TRIM transport and range of ions in matter TRR time resolved reflectivity UHV ultra high vacuum ULE ultra low energy ULSI ultra large scale integrated technology USJ ultra shallow junctions USJ ultra shallow junction VD drain voltage Vg gate voltage VH Hall voltage threshold voltage Vt xv
Page 1 and 2: Damage formation and annealing stud
Page 3 and 4: 3.2.2.6 Other models 40 3.2.3 Other
Page 5 and 6: Chapter 7 Interaction between Xe, F
Page 7 and 8: List of Figures Figure 1.1 a) Schem
Page 9 and 10: Figure 4.13 Variation in the kinema
Page 11 and 12: Figure 6.10 MEIS energy spectra for
Page 13: Figure 7.8 Combined MEIS Xe depth p
Page 17 and 18: Abstract The work described in this
Page 19 and 20: Chapter 7 5 M. Werner, J.A. van den
Page 21 and 22: terminal (Vg), current cannot flow
Page 23 and 24: This is an approximate average leve
Page 25 and 26: the active channel, adjacent to the
Page 27 and 28: To continue to improve devices ther
Page 29 and 30: produces a device quality regrown l
Page 31 and 32: technique of channelling Rutherford
Page 33 and 34: 22 J.S Williams. Solid Phase Recrys
Page 35 and 36: and the probability of scattering t
Page 37 and 38: importance for many atomic collisio
Page 39 and 40: M1, V0, E0 Figure 2.2 Elastic scatt
Page 41 and 42: 2.3.1 Models for inelastic energy l
Page 43 and 44: dE/dx (ev/Ang) 10 1 Inelastic Energ
Page 45 and 46: dE/dx (eV/Ang) 125 100 75 50 25 0 2
Page 47 and 48: Figure 2.5 Results of TRIM simulati
Page 49 and 50: Chapter 3 Damage and Annealing proc
Page 51 and 52: the Si/SiO2 interface, consuming th
Page 53 and 54: On the basis that by creating an in
Page 55 and 56: Figure 3.4 Structure of crystalline
Page 57 and 58: a Si atom will suffer little angula
Page 59 and 60: 3.2.2.5 Homogeneous model (Critical
Page 61 and 62: Sputtering and atomic mixing play a
Page 63 and 64: and is approximately 25 times faste
Page 65 and 66:
elevant dopants later. For equal co
Page 67 and 68:
nearest neighbour distance (52). By
Page 69 and 70:
Category I defects are produced whe
Page 71 and 72:
thermal annealing (600 - 700 °C an
Page 73 and 74:
Figure 3.11 Relationship between im
Page 75 and 76:
defect pairs due to Coulomb attract
Page 77 and 78:
⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
Page 79 and 80:
27 R.D. Goldberg, J. S. Williams, a
Page 81 and 82:
67 H. Bracht. Diffusion Mechanism a
Page 83 and 84:
Hall effect measurements were carri
Page 85 and 86:
energy than one scattered from an a
Page 87 and 88:
epresents a small improvement over
Page 89 and 90:
(dE/dx)out multiplied by the path l
Page 91 and 92:
they are small compared to the diff
Page 93 and 94:
ackscattering (27). This fact forms
Page 95 and 96:
Figure 4.7 a) Plot of a Gaussian di
Page 97 and 98:
similar to the width of the error f
Page 99 and 100:
UP Ion Beam SPIN Rotation Sample Sc
Page 101 and 102:
Kinematic factor (K) 1.0 0.8 0.6 0.
Page 103 and 104:
Figure 4.14 Illustration of the dou
Page 105 and 106:
4.2.2.4 Interpretation of spectra A
Page 107 and 108:
with are comparatively small, ~ 0.5
Page 109 and 110:
Inelastic energy loss (eV/Ang) 32 2
Page 111 and 112:
iterative procedure is carried out
Page 113 and 114:
Yield (couts per 5µC) 300 250 200
Page 115 and 116:
SIMS experiments were also carried
Page 117 and 118:
MEIS, using the scattering conditio
Page 119 and 120:
4.5 Sample production Samples have
Page 121 and 122:
an N2/O2 environment to maintain an
Page 123 and 124:
38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126:
damage evolution behaviour observed
Page 127 and 128:
Yield (counts per 5 µC) 250 200 15
Page 129 and 130:
essentially a “zero dose” profi
Page 131 and 132:
no longer “visible” in MEIS has
Page 133 and 134:
yield (cts / 5µC) 500 400 300 200
Page 135 and 136:
5.4 Conclusion MEIS analysis with a
Page 137 and 138:
Chapter 6 Annealing studies 6.1 Int
Page 139 and 140:
6.2.2.2 Results and Discussion Figu
Page 141 and 142:
theory predictions and X-ray fluore
Page 143 and 144:
implantation conditions are those u
Page 145 and 146:
a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148:
greater than MEIS. SIMS is not sens
Page 149 and 150:
attributed to the interference betw
Page 151 and 152:
The as-implanted sample, with a bro
Page 153 and 154:
a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156:
interface, as evidenced by the high
Page 157 and 158:
duration, is observed. MEIS results
Page 159 and 160:
Yield (counts per 5µC) 500 400 300
Page 161 and 162:
ack edges of the Si peaks are very
Page 163 and 164:
underneath the SiO2 layer, iii) it
Page 165 and 166:
R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168:
As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170:
R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172:
Following annealing it was observed
Page 173 and 174:
∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176:
Yield (counts per 5 uC) 350 300 250
Page 177 and 178:
(FWHM). Concomitantly, As in the re
Page 179 and 180:
Page 181 and 182:
The higher temperature anneals carr
Page 183 and 184:
ecomes steeper for the sample annea
Page 185 and 186:
Figure 6.28 Schematic illustrations
Page 187 and 188:
and the 2D picture in Figure 6.31b)
Page 189 and 190:
6.5 Conclusion In summary, in this
Page 191 and 192:
20 L. Capello, T. H. Metzger, M. We
Page 193 and 194:
egarding B profiles relevant to the
Page 195 and 196:
Page 197 and 198:
TRIM AU 0.04 0.03 0.02 0.01 TRIM si
Page 199 and 200:
a) F profile PAI 3 keV BF2 b) F pro
Page 201 and 202:
Yield (counts per 5 µC) 20 15 10 5
Page 203 and 204:
the corresponding PAI sample, yield
Page 205 and 206:
amorphous matrix, (16) i.e. local c
Page 207 and 208:
21 M. Anderle, M. Bersani, D. Giube
Page 209 and 210:
stopped at depths beyond the observ
Page 211:
the role of each individual element
show all

Damage formation and annealing studies of low energy ion implants ...

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?