Damage formation and annealing studies of low energy ion implants ...

a)
b)
c)
Yield (counts per 5 µC)
Yield (counts per 5 µC)
100
90
80
70
60
50
40
30
20
10
0
0.0
0 2 4 6 8 10 12 14 16
300
250
200
150
100
50
Yield (counts per 5 µC)
As depth
Depth (nm)
126
3 keV as-impl As
3 keV 600C 20mins As
3 keV 1130C spike As
3 keV as-impl PAI As
3 keV 600C 20mins PAI As
3 keV 1130C spike PAI As
0
0
0 2 4 6 8
Depth (nm)
10 12 14 16
180
160
140
120
100
80
60
40
20
Si depth
PAI, 1130C spike anneal
virgin
as-implanted
600C 20m
1130C spike
PAI as-implanted
PAI 600C 20m
PAI 1130C spike
3.5x10 21
3.0x10 21
2.5x10 21
2.0x10 21
1.5x10 21
1.0x10 21
5.0x10 20
5x10 22
4x10 22
3x10 22
2x10 22
1x10 22
0
0 2 4 6
Depth (nm)
8 10
Figure 6.4 MEIS depth profiles along the [111] blocking direction a) As depth profiles for all
the annealed samples. b) Si depth profiles for all the annealed samples. c) Combined depth
profile of As, Si and O for the PAI 1130 °C spike annealed sample.
As
Si
O
Concentration (at/cm 3
)
concentration (at/cm 3
)