Damage formation and annealing studies of low energy ion implants ...

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14 R.D. Goldberg, J. S. Williams, and R. G. Elliman, Nucl Instrum Meth. B106 (1995) 242. 15 J. Linnross, R. G. Elliman and W. Brown, J. Mater. Res. 3 (1988) 1208. 16 R.D. Goldberg, J. S. Williams, and R. G. Elliman, Mat. Res. Soc. Symp. Proc. 316 (1994) 259. 17 J. S. Williams, H. H. Tan, R.D. Goldberg, R. A. Brown, and C Jagadish, Mat. Res. Soc. Proc. 316 (1994) 15. 18 T. Henkel, V. Heera, R. Koegler, W Skorupa and M Seibt, J. Appl. Phys. 82 (1997) 5360. 19 J A van den Berg, S. Zhang, D. G. Armour, S. Whelan R.D. Goldberg, E. J. H. Collart, P. Bailey and T. C. Q. Noakes., Nucl. Instrum. Methods B 183 (2001) 154. 20 J. A. van den Berg, D. G. Armour, S Zhang and S Whelan, L.Wang and A. G. Cullis, E. H. J. Collart, R. D. Goldberg, P. Bailey and T. C. Q. Noakes, J Vac. Sci. Technol. B 20 (2002), 974. 21 R. D. Goldberg, D. G. Armour, J. A. van den Berg, N. Knorr, H. Ohno, S. Whelan, S. Zhang, C. E. A. Cook, and M. A. Foad, Rev. Sci. Instr. 71 (2) (2000) 1032 22 W. K. Chu, J. W. Mayer, M. Nicolet, Backscattering Spectrometry, (Academic Press, New York, 1978). 23 J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985). 24 R.M. Tromp, in Practical Surface Analysis, Vol. 2: Ion and Neutral Spectroscopy, D. Briggs and M.P. Seah (eds.), 1992, Wiley, p.577. 25 A H Al-Bayati, K Ormannn- Rossiter, J A van den Berg and D G Armour, Surface Sci 241 (1991) 91. 26 http://www.srim.org/ (accessed 02/06). 27 M D Giles, J Electrochem. Soc. 138 (1991) 1160. 28 H.-J. Gossmann, T. E. Hayes, P. A. Stolk, D,C. Jacobson, G. H. Gilmer, J. M. Poate, H. S. Luftman, T. K. Mogi, M. O. Thompson, Appl. Phys. Letts.71 (1997) 3862. 117
Chapter 6 Annealing studies 6.1 Introduction In this chapter the results of a range of annealing studies are described and discussed, most of which were carried out within the IMPULSE project and as such are highly relevant to current technologies and possible solutions for future devices. The studies in this chapter fall into three general categories. The first category in section 6.2 focuses on implantation and annealing conditions that are similar to those used in device production. This is based on annealing predominantly using RTA and spike annealing, at temperatures above 1000 °C. Comparisons with lower temperatures are also included. The effects of reduced implant energy are discussed. The predominant feature with these conditions is that diffusion of the dopant will be the limiting factor in reducing the junction depth. The second category in this chapter is in section 6.3, concerning studies of SPER at lower annealing temperatures, in the region of 550 °C to 700 °C. This annealing range has been identified as a possible solution for 65 and 45 nm nodes, as the problem of diffusion would be minimal (1-3). Note that in the semiconductor industry the terminology SPER often refers to annealing at lower temperatures, approximately 550 – 800 °C. From a physical point of view, regrowth at higher temperatures still occurs by the SPER process but is more commonly referred to as RTA/RTP, spike annealing, flash etc, based on the annealing equipment used rather than the physical process that occur. The final category, in section 6.4, is the regrowth behaviour of SOI wafers, which are currently being implemented in production. Differences in annealing behaviour were observed in SOI compared to bulk Si. One of the features of the IMPULSE project was to further develop analytical techniques for USJ characterisation. Dispersed throughout this chapter are some of the interesting comparisons with various X-ray techniques carried out at the ESRF. As well as providing additional information on the samples, these highlight the potential of these techniques for future studies. 118
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
Page 5 and 6:
Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
Page 19 and 20:
Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
Page 27 and 28:
To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
Page 49 and 50:
Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
Page 85 and 86: energy than one scattered from an a
Page 87 and 88: epresents a small improvement over
Page 89 and 90: (dE/dx)out multiplied by the path l
Page 91 and 92: they are small compared to the diff
Page 93 and 94: ackscattering (27). This fact forms
Page 95 and 96: Figure 4.7 a) Plot of a Gaussian di
Page 97 and 98: similar to the width of the error f
Page 99 and 100: UP Ion Beam SPIN Rotation Sample Sc
Page 101 and 102: Kinematic factor (K) 1.0 0.8 0.6 0.
Page 103 and 104: Figure 4.14 Illustration of the dou
Page 105 and 106: 4.2.2.4 Interpretation of spectra A
Page 107 and 108: with are comparatively small, ~ 0.5
Page 109 and 110: Inelastic energy loss (eV/Ang) 32 2
Page 111 and 112: iterative procedure is carried out
Page 113 and 114: Yield (couts per 5µC) 300 250 200
Page 115 and 116: SIMS experiments were also carried
Page 117 and 118: MEIS, using the scattering conditio
Page 119 and 120: 4.5 Sample production Samples have
Page 121 and 122: an N2/O2 environment to maintain an
Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126: damage evolution behaviour observed
Page 127 and 128: Yield (counts per 5 µC) 250 200 15
Page 129 and 130: essentially a “zero dose” profi
Page 131 and 132: no longer “visible” in MEIS has
Page 133 and 134: yield (cts / 5µC) 500 400 300 200
Page 135: 5.4 Conclusion MEIS analysis with a
Page 139 and 140: 6.2.2.2 Results and Discussion Figu
Page 141 and 142: theory predictions and X-ray fluore
Page 143 and 144: implantation conditions are those u
Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172: Following annealing it was observed
Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 179 and 180: Yield (counts per 5 µC) 450 400 35
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
Page 185 and 186: Figure 6.28 Schematic illustrations
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and the 2D picture in Figure 6.31b)
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6.5 Conclusion In summary, in this
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20 L. Capello, T. H. Metzger, M. We
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egarding B profiles relevant to the
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Yield (counts per 5 µC) 400 300 20
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TRIM AU 0.04 0.03 0.02 0.01 TRIM si
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a) F profile PAI 3 keV BF2 b) F pro
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Yield (counts per 5 µC) 20 15 10 5
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the corresponding PAI sample, yield
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amorphous matrix, (16) i.e. local c
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21 M. Anderle, M. Bersani, D. Giube
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stopped at depths beyond the observ
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the role of each individual element
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