Damage formation and annealing studies of low energy ion implants ...

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they are stopped into the amorphised layer nearer the surface, where they are more readily accommodated. The correlation between the amorphous layer that grows in a planar fashion to greater depths and the “movement” of the Sb profile to greater depths, as indicated by arrows, is evident. Although for the Sb implant, the lowest dose of 1 × 10 14 cm -2 shows a later stage in the development of the combined disorder / dopant profile behaviour, in essence the observations for the two heavy ion dopants are commensurate and both scenarios present evidence of an intricately combined damage evolution-dopant migration mechanism. yield (cts / 5 uC) yield (cts / 5 uC) 100 10 100 10 1 Displaced Si 0 2 4 6 8 10 12 14 Sb Depth (nm) 115 virgin 1E14 5E14 1E15 3E15 5E15 TRIM Vacanies 0 2 4 6 8 10 12 14 Depth (nm) 1E14 5E14 1E15 3E15 5E15 2 keV Sb TRIM 1 0.1 0.1 0.01 TRIM (A.U) 1E-3 Figure 5.5 Depth profiles of displaced Si and As implant atoms obtained from the MEIS energy spectra in Figure 5.4. The TRIM calculated Si vacancy distribution and As implant profile are shown for comparison. The dose dependent peak position of the Sb implant is indicated by arrows. TRIM (A.U.)
5.4 Conclusion MEIS analysis with additional SIMS depth profiling has been used to investigate the growth mode of the amorphous layer as well as the relationship between disorder formation and dopant redistribution for shallow As and Sb implants into Si performed at room temperature. MEIS studies show that damage evolution caused by these heavy ions for doses from 3 × 10 13 cm -2 upwards does not follow the profile of the energy deposition function, but proceeds from the surface where an initial 4 nm wide amorphous layer developed, and then grows inwards in a planar fashion as the dose is increased. It is proposed that a fraction of the generated interstitials migrate towards the surface, and are captured by the oxide or amorphous /crystal Si interface, where their trapping nucleates the growth of a shallow amorphous layer and the subsequent planar growth inwards of the damage layer. The observed build up of the As profile, the maximum of which moves from a depth of 3.5 nm to 5.5 nm over the dose range studied is related to this process: Arsenic that is stopped in the as yet not amorphised layer, moves out into the growing disordered layer, in which it is more easily accommodated. SIMS studies have confirmed this dopant segregation effect. Low dose, shallow Sb implants also exhibit this novel damage evolution / dopant movement effect. References 1 L. Pelaz, L.A. Marqués, J. Barbolla. Appl. Phys. Rev. 96 Dec. 2004, p5947. 2 F. Priolo and E. Rimini, Materials Science Reports 5 (1990) 319. 3 F. L.Vook and H. J. Stein, Radiat. Eff. 2(1969) 23. 4 L. A. Christel, J. F Gibbons and T. W. Sigmon, J. Appl. Phys. 52 (1981) 7143. 5 M. L. Swanson, J. R. Parsons, and C. W. Hoelke, Radiat. Eff. 9, 249, (1971). 6 L. T. Chadderton and F. H. Eisen, Radiat. Eff. 7, 129 (1971). 7 F. F. Morehead, Jr. and B. L. Crowther, Radiat. Eff. 6 (1970) 27. 8 J. R. Dennis and E.B Hale, J. Appl. Phys. 49(3) (1978) 1119. 9 J. R. Dennis and E. B. Hale, Appl. Phys. Lett. 29, 523 (1976). 10 L. M. Howe and M. H. Rainville, Nucl. Instrum Meth B 19/20 (1987) 61 11 R. G. Elliman, J. S. Williams, W. L.Brown, A. Leiberich, D. H. Maher, and R. V. Knoell, Nucl Instrum Meth. B19/20 (1987) 435. 12 R. D. Goldberg, R. G. Elliman, and J. S. Williams, Nucl. Instrum. Meth. B 80/81, 596 (1993). 13 M. Avrami, J. Chem. Phys. 9, 177 (1941). 116
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
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Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
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To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
Page 83 and 84: Hall effect measurements were carri
Page 85 and 86: energy than one scattered from an a
Page 87 and 88: epresents a small improvement over
Page 89 and 90: (dE/dx)out multiplied by the path l
Page 91 and 92: they are small compared to the diff
Page 93 and 94: ackscattering (27). This fact forms
Page 95 and 96: Figure 4.7 a) Plot of a Gaussian di
Page 97 and 98: similar to the width of the error f
Page 99 and 100: UP Ion Beam SPIN Rotation Sample Sc
Page 101 and 102: Kinematic factor (K) 1.0 0.8 0.6 0.
Page 103 and 104: Figure 4.14 Illustration of the dou
Page 105 and 106: 4.2.2.4 Interpretation of spectra A
Page 107 and 108: with are comparatively small, ~ 0.5
Page 109 and 110: Inelastic energy loss (eV/Ang) 32 2
Page 111 and 112: iterative procedure is carried out
Page 113 and 114: Yield (couts per 5µC) 300 250 200
Page 115 and 116: SIMS experiments were also carried
Page 117 and 118: MEIS, using the scattering conditio
Page 119 and 120: 4.5 Sample production Samples have
Page 121 and 122: an N2/O2 environment to maintain an
Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126: damage evolution behaviour observed
Page 127 and 128: Yield (counts per 5 µC) 250 200 15
Page 129 and 130: essentially a “zero dose” profi
Page 131 and 132: no longer “visible” in MEIS has
Page 133: yield (cts / 5µC) 500 400 300 200
Page 137 and 138: Chapter 6 Annealing studies 6.1 Int
Page 139 and 140: 6.2.2.2 Results and Discussion Figu
Page 141 and 142: theory predictions and X-ray fluore
Page 143 and 144: implantation conditions are those u
Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172: Following annealing it was observed
Page 173 and 174: ∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
Page 175 and 176: Yield (counts per 5 uC) 350 300 250
Page 177 and 178: (FWHM). Concomitantly, As in the re
Page 179 and 180: Yield (counts per 5 µC) 450 400 35
Page 181 and 182: The higher temperature anneals carr
Page 183 and 184: ecomes steeper for the sample annea
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Figure 6.28 Schematic illustrations
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and the 2D picture in Figure 6.31b)
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6.5 Conclusion In summary, in this
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20 L. Capello, T. H. Metzger, M. We
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egarding B profiles relevant to the
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Yield (counts per 5 µC) 400 300 20
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TRIM AU 0.04 0.03 0.02 0.01 TRIM si
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a) F profile PAI 3 keV BF2 b) F pro
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Yield (counts per 5 µC) 20 15 10 5
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the corresponding PAI sample, yield
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amorphous matrix, (16) i.e. local c
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21 M. Anderle, M. Bersani, D. Giube
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stopped at depths beyond the observ
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the role of each individual element
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