Damage formation and annealing studies of low energy ion implants ...

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Figure 6.26 MEIS energy spectra from BF2 samples a) bulk Si, b) 60 nm SOI, and c) 100 nm SOI. In all cases the wafers were pre amorphised with 40 keV Xe to a fluence of 1E14 cm -2 . In a) and b) samples were implanted with 3 keV BF2 and in c) with 1 keV BF2. Samples were annealed at various temperatures, as indicated. Figure 6.27 MEIS energy spectra for SOI (top) and Bulk Si (bottom) wafers. Samples were pre-amorphised, implanted with 3 keV As to 2E15 and annealed at 600 °C for various times. Figure 6.28 Schematic illustrations of possible damage scenarios with the associated idealised MEIS profile. Figure 6.29 TEM image from a sample on 60 nm SOI, PAI, 3 keV As and annealed at 550 °C for 600s. Figure 6.30 a) TRIM results for a 3 keV As implant into Si including vacancy and interstitial profiles. b) Pictorial representation of the TRIM calculation. Figure 6.31 a) TRIM results for a 40 keV Xe implant, together with the Si vacancy and interstitial depth profiles. b) Pictorial representation of the calculation. Figure 6.32 Illustration of proposed regrowth mechanism on SOI wafers. Figure 7.1 MEIS energy spectra of Xe pre-amorphised Si samples, implanted with 1 and 3 keV BF2, before and after annealing at 1025 °C for 10s. The inset shows the depth Xe depth profiles before and after annealing. Figure 7.2 MEIS Xe depth profiles for Xe pre-amorphised Si samples, implanted with 3 keV BF2 (top) and 1 keV BF2 + (bottom), as-implanted and after different anneals. Figure 7.3 TRIM depth profiles for B and F from 1 and 3 keV BF2 implants. Figure 7.4 SIMS F depth profiles for 3 keV BF2 samples, as-implanted and after a variety of anneals in a) PAI samples and b) non-PAI samples. The MEIS profile in c) shows the non-PAI, 3 keV BF2 as-implanted profile. Figure 7.5 1 keV SIMS profiles for a) PAI samples and b) non-PAI samples. Figure 7.6 Combined MEIS Xe depth profiles and SIMS F depth profiles for Xe pre-amorphised samples implanted with 3 keV BF2 (left) and 1 keV BF2 (right), as-implanted and after various anneals. Figure 7.7 a) SIMS B depth profiles for Si implanted with 3 keV BF2 with and without Xe pre-amorphisation, as-implanted, and after anneals of 600 °C 20mins, 1000 °C 5s and 1130 °C spike. b) B profiles from PAI samples with the corresponding non PAI profile subtracted, showing the trapped B. xii
Figure 7.8 Combined MEIS Xe depth profiles with SIMS F and B depth profiles overlaid, for a) 1000 °C 5s and b) 1130 °C spike samples. Figure 7.9 EFTEM images of a Xe PAI, 3keV BF2 implanted Si sample after annealing to 1025 °C for 10 s using electrons with an energy loss corresponding to (a) the M ionisation edge and (b) from the N ionisation edge of Xe. xiii
Page 1 and 2: Damage formation and annealing stud
Page 3 and 4: 3.2.2.6 Other models 40 3.2.3 Other
Page 5 and 6: Chapter 7 Interaction between Xe, F
Page 7 and 8: List of Figures Figure 1.1 a) Schem
Page 9 and 10: Figure 4.13 Variation in the kinema
Page 11: Figure 6.10 MEIS energy spectra for
Page 15 and 16: Abbreviations and Symbols a/c amorp
Page 17 and 18: Abstract The work described in this
Page 19 and 20: Chapter 7 5 M. Werner, J.A. van den
Page 21 and 22: terminal (Vg), current cannot flow
Page 23 and 24: This is an approximate average leve
Page 25 and 26: the active channel, adjacent to the
Page 27 and 28: To continue to improve devices ther
Page 29 and 30: produces a device quality regrown l
Page 31 and 32: technique of channelling Rutherford
Page 33 and 34: 22 J.S Williams. Solid Phase Recrys
Page 35 and 36: and the probability of scattering t
Page 37 and 38: importance for many atomic collisio
Page 39 and 40: M1, V0, E0 Figure 2.2 Elastic scatt
Page 41 and 42: 2.3.1 Models for inelastic energy l
Page 43 and 44: dE/dx (ev/Ang) 10 1 Inelastic Energ
Page 45 and 46: dE/dx (eV/Ang) 125 100 75 50 25 0 2
Page 47 and 48: Figure 2.5 Results of TRIM simulati
Page 49 and 50: Chapter 3 Damage and Annealing proc
Page 51 and 52: the Si/SiO2 interface, consuming th
Page 53 and 54: On the basis that by creating an in
Page 55 and 56: Figure 3.4 Structure of crystalline
Page 57 and 58: a Si atom will suffer little angula
Page 59 and 60: 3.2.2.5 Homogeneous model (Critical
Page 61 and 62: Sputtering and atomic mixing play a
Page 63 and 64:
and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
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Category I defects are produced whe
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thermal annealing (600 - 700 °C an
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Figure 3.11 Relationship between im
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defect pairs due to Coulomb attract
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⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
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27 R.D. Goldberg, J. S. Williams, a
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67 H. Bracht. Diffusion Mechanism a
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Hall effect measurements were carri
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energy than one scattered from an a
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epresents a small improvement over
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(dE/dx)out multiplied by the path l
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they are small compared to the diff
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ackscattering (27). This fact forms
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Figure 4.7 a) Plot of a Gaussian di
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similar to the width of the error f
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UP Ion Beam SPIN Rotation Sample Sc
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Kinematic factor (K) 1.0 0.8 0.6 0.
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Figure 4.14 Illustration of the dou
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4.2.2.4 Interpretation of spectra A
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with are comparatively small, ~ 0.5
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Inelastic energy loss (eV/Ang) 32 2
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iterative procedure is carried out
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Yield (couts per 5µC) 300 250 200
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SIMS experiments were also carried
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MEIS, using the scattering conditio
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4.5 Sample production Samples have
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an N2/O2 environment to maintain an
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38 M. Anderle, M. Barozzi, M. Bersa
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damage evolution behaviour observed
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Yield (counts per 5 µC) 250 200 15
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essentially a “zero dose” profi
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no longer “visible” in MEIS has
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yield (cts / 5µC) 500 400 300 200
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5.4 Conclusion MEIS analysis with a
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Chapter 6 Annealing studies 6.1 Int
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6.2.2.2 Results and Discussion Figu
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theory predictions and X-ray fluore
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implantation conditions are those u
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a) b) c) Yield (counts per 5 µC) Y
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greater than MEIS. SIMS is not sens
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attributed to the interference betw
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The as-implanted sample, with a bro
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a) b) Yield (counts per 5 µC) Yiel
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interface, as evidenced by the high
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duration, is observed. MEIS results
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Yield (counts per 5µC) 500 400 300
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ack edges of the Si peaks are very
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underneath the SiO2 layer, iii) it
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R s (Ω/sq) 950 900 850 800 750 60
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As concentration (at/cm 3 ) 1E22 1E
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R s (Ω/sq) 950 900 850 800 750 70
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Following annealing it was observed
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∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
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Yield (counts per 5 uC) 350 300 250
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(FWHM). Concomitantly, As in the re
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The higher temperature anneals carr
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ecomes steeper for the sample annea
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Figure 6.28 Schematic illustrations
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and the 2D picture in Figure 6.31b)
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6.5 Conclusion In summary, in this
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20 L. Capello, T. H. Metzger, M. We
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egarding B profiles relevant to the
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TRIM AU 0.04 0.03 0.02 0.01 TRIM si
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a) F profile PAI 3 keV BF2 b) F pro
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Yield (counts per 5 µC) 20 15 10 5
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the corresponding PAI sample, yield
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amorphous matrix, (16) i.e. local c
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21 M. Anderle, M. Bersani, D. Giube
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stopped at depths beyond the observ
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the role of each individual element
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