Damage formation and annealing studies of low energy ion implants ...

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emain at the extract ion energy throughout the entire length of the beam line for higher energy implants. This is called the drift mode. The UHV part of the system comprises of the target chamber, a sample preparation chamber, and a loadlock chamber which can be quickly vented to air allow the vacuum in the target chamber to be maintained while allowing fast transfer of samples. Silicon samples of up to 12 × 12 mm are mounted into sample holders, and are transported between chambers by transfer rods. The preparation chamber and the loadlock both contain a carousel for storing up to six samples. The target chamber is also equipped with X-ray gun, electron gun and electron energy analyser for in situ XPS and AES analysis. Figure 4.23 – Salford ultra low energy ion beam system. 4.5.2 Annealing equipment Most samples were annealed in a lamp based RTP system. Halogen lamps mounted above and below were capable of producing ramp rates of typically 25 – 70 °Cs -1 Wafers were mounted on a quartz holder. For samples annealed at Salford, small samples were placed onto an 8" wafer in the annealer. Samples were annealed in 101
an N2/O2 environment to maintain an oxide layer to prevent dopant loss. This resulted in some oxide growth for certain annealing conditions. References 1 J.F. Van der Veen, Surf. Sci. Rep., 5, Nos. 5/6, 1985. 2 R.M. Tromp, Medium Energy Ion Scattering. In: Briggs D. and Seah P. editors. Practical surface analysis. Volume 2 – Ion and Neutral Spectroscopy. 2nd ed. John Wiley Ltd. 1992. 3 http://www.dl.ac.uk/MEIS/ (accessed 11/2/06). 4 Backscattering Spectrometry, W. K. Chu, J. W. Mayer, M. Nicolet, Academic Press, New York, 1978. 5 Fundamentals of surface and thin film analysis, L.C. Feldman, J. Mayer, North- Holland, 1986. 6 Methods of Surface Analysis. Techniques and Applications. Edited by J.M. Walls. Cambridge University Press, 1989. 7 L.J. van der Pauw. Philips Tech. Rev. Vol 20, (1958), p220. 8 Electronic Materials Science For Integrated Circuits in Si and GaAs. J.W. Mayer, S.S. Lau. Macmillian Publishing Company, 1990. 9 L. Capello, PhD thesis. Structural investigation of silicon after ion-implantation using combined x-ray scattering methods. University of Lyon (France) and Torino (Italy), 2005. 10 http://www.esrf.fr/UsersAndScience/Experiments/SurfaceScience/ID01/ (accessed 11/2/06). 11 R. D. Goldberg, D. G. Armour, J. A. van den Berg, N. Knorr, H. Ohno, S. Whelan, S. Zhang, C. E. A. Cook, and M. A. Foad, Rev. Sci. Instr. 71 (2) (2000) 1032 12 http://www.appliedmaterials.com/products/Quantum.html?menuID=1_10_1 (accessed 11/2/06). 13 P. Bailey, T.C.Q. Noakes, C.J. Baddeley, S.P.Tear, D.P.Woodruff, Nucl. Instr. and Meth. B 183 (2001) 62. 14 M. Copel, R.M. Tromp. Surface. Sci. Lett. 337 (1995) L773. 15 D.P.Woodruff, D. Brown, P.D. Quinn, T.C.Q. Noakes, P. Bailey. Nucl. Instr. and Meth. B 183 (2001) 128. 16 T. Gustafsson, H.C. Lu, B.W. Busch, W.H. Schulte, E. Garfunkel. Nucl. Instr. and Meth. B 183 (2001) 146. 102
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Damage formation and annealing stud
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3.2.2.6 Other models 40 3.2.3 Other
Page 5 and 6:
Chapter 7 Interaction between Xe, F
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List of Figures Figure 1.1 a) Schem
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Figure 4.13 Variation in the kinema
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Figure 6.10 MEIS energy spectra for
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Figure 7.8 Combined MEIS Xe depth p
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Abbreviations and Symbols a/c amorp
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Abstract The work described in this
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Chapter 7 5 M. Werner, J.A. van den
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terminal (Vg), current cannot flow
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This is an approximate average leve
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the active channel, adjacent to the
Page 27 and 28:
To continue to improve devices ther
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produces a device quality regrown l
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technique of channelling Rutherford
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22 J.S Williams. Solid Phase Recrys
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and the probability of scattering t
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importance for many atomic collisio
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M1, V0, E0 Figure 2.2 Elastic scatt
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2.3.1 Models for inelastic energy l
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dE/dx (ev/Ang) 10 1 Inelastic Energ
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dE/dx (eV/Ang) 125 100 75 50 25 0 2
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Figure 2.5 Results of TRIM simulati
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Chapter 3 Damage and Annealing proc
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the Si/SiO2 interface, consuming th
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On the basis that by creating an in
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Figure 3.4 Structure of crystalline
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a Si atom will suffer little angula
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3.2.2.5 Homogeneous model (Critical
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Sputtering and atomic mixing play a
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and is approximately 25 times faste
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elevant dopants later. For equal co
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nearest neighbour distance (52). By
Page 69 and 70: Category I defects are produced whe
Page 71 and 72: thermal annealing (600 - 700 °C an
Page 73 and 74: Figure 3.11 Relationship between im
Page 75 and 76: defect pairs due to Coulomb attract
Page 77 and 78: ⎛ 〈 C ⎞ ⎛ ⎞ I 〉 〈 C V
Page 79 and 80: 27 R.D. Goldberg, J. S. Williams, a
Page 81 and 82: 67 H. Bracht. Diffusion Mechanism a
Page 83 and 84: Hall effect measurements were carri
Page 85 and 86: energy than one scattered from an a
Page 87 and 88: epresents a small improvement over
Page 89 and 90: (dE/dx)out multiplied by the path l
Page 91 and 92: they are small compared to the diff
Page 93 and 94: ackscattering (27). This fact forms
Page 95 and 96: Figure 4.7 a) Plot of a Gaussian di
Page 97 and 98: similar to the width of the error f
Page 99 and 100: UP Ion Beam SPIN Rotation Sample Sc
Page 101 and 102: Kinematic factor (K) 1.0 0.8 0.6 0.
Page 103 and 104: Figure 4.14 Illustration of the dou
Page 105 and 106: 4.2.2.4 Interpretation of spectra A
Page 107 and 108: with are comparatively small, ~ 0.5
Page 109 and 110: Inelastic energy loss (eV/Ang) 32 2
Page 111 and 112: iterative procedure is carried out
Page 113 and 114: Yield (couts per 5µC) 300 250 200
Page 115 and 116: SIMS experiments were also carried
Page 117 and 118: MEIS, using the scattering conditio
Page 119: 4.5 Sample production Samples have
Page 123 and 124: 38 M. Anderle, M. Barozzi, M. Bersa
Page 125 and 126: damage evolution behaviour observed
Page 127 and 128: Yield (counts per 5 µC) 250 200 15
Page 129 and 130: essentially a “zero dose” profi
Page 131 and 132: no longer “visible” in MEIS has
Page 133 and 134: yield (cts / 5µC) 500 400 300 200
Page 135 and 136: 5.4 Conclusion MEIS analysis with a
Page 137 and 138: Chapter 6 Annealing studies 6.1 Int
Page 139 and 140: 6.2.2.2 Results and Discussion Figu
Page 141 and 142: theory predictions and X-ray fluore
Page 143 and 144: implantation conditions are those u
Page 145 and 146: a) b) c) Yield (counts per 5 µC) Y
Page 147 and 148: greater than MEIS. SIMS is not sens
Page 149 and 150: attributed to the interference betw
Page 151 and 152: The as-implanted sample, with a bro
Page 153 and 154: a) b) Yield (counts per 5 µC) Yiel
Page 155 and 156: interface, as evidenced by the high
Page 157 and 158: duration, is observed. MEIS results
Page 159 and 160: Yield (counts per 5µC) 500 400 300
Page 161 and 162: ack edges of the Si peaks are very
Page 163 and 164: underneath the SiO2 layer, iii) it
Page 165 and 166: R s (Ω/sq) 950 900 850 800 750 60
Page 167 and 168: As concentration (at/cm 3 ) 1E22 1E
Page 169 and 170: R s (Ω/sq) 950 900 850 800 750 70
Page 171 and 172:
Following annealing it was observed
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∆a/a (x 10 -3 ) 4,0 epi550 3,5 3,
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Yield (counts per 5 uC) 350 300 250
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(FWHM). Concomitantly, As in the re
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Yield (counts per 5 µC) 450 400 35
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The higher temperature anneals carr
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ecomes steeper for the sample annea
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Figure 6.28 Schematic illustrations
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and the 2D picture in Figure 6.31b)
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6.5 Conclusion In summary, in this
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20 L. Capello, T. H. Metzger, M. We
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egarding B profiles relevant to the
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Yield (counts per 5 µC) 400 300 20
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TRIM AU 0.04 0.03 0.02 0.01 TRIM si
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a) F profile PAI 3 keV BF2 b) F pro
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Yield (counts per 5 µC) 20 15 10 5
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the corresponding PAI sample, yield
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amorphous matrix, (16) i.e. local c
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21 M. Anderle, M. Bersani, D. Giube
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stopped at depths beyond the observ
Page 211:
the role of each individual element
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