Damage formation and annealing studies of low energy ion implants ...

emain at the extract ion energy throughout the entire length of the beam line for higher
energy implants. This is called the drift mode.
The UHV part of the system comprises of the target chamber, a sample
preparation chamber, and a loadlock chamber which can be quickly vented to air allow
the vacuum in the target chamber to be maintained while allowing fast transfer of
samples. Silicon samples of up to 12 × 12 mm are mounted into sample holders, and are
transported between chambers by transfer rods. The preparation chamber and the
loadlock both contain a carousel for storing up to six samples. The target chamber is
also equipped with X-ray gun, electron gun and electron energy analyser for in situ XPS
and AES analysis.
Figure 4.23 – Salford ultra low energy ion beam system.
4.5.2 Annealing equipment
Most samples were annealed in a lamp based RTP system. Halogen lamps
mounted above and below were capable of producing ramp rates of typically 25 –
70 °Cs -1 Wafers were mounted on a quartz holder. For samples annealed at Salford,
small samples were placed onto an 8" wafer in the annealer. Samples were annealed in
101