Damage formation and annealing studies of low energy ion implants ...

Figure 6.26 MEIS energy spectra from BF2 samples a) bulk Si, b) 60 nm SOI, and c)
100 nm SOI. In all cases the wafers were pre amorphised with 40 keV
Xe to a fluence of 1E14 cm -2 . In a) and b) samples were implanted with 3
keV BF2 and in c) with 1 keV BF2. Samples were annealed at various
temperatures, as indicated.
Figure 6.27 MEIS energy spectra for SOI (top) and Bulk Si (bottom) wafers.
Samples were pre-amorphised, implanted with 3 keV As to 2E15 and
annealed at 600 °C for various times.
Figure 6.28 Schematic illustrations of possible damage scenarios with the associated
idealised MEIS profile.
Figure 6.29 TEM image from a sample on 60 nm SOI, PAI, 3 keV As and annealed
at 550 °C for 600s.
Figure 6.30 a) TRIM results for a 3 keV As implant into Si including vacancy and
interstitial profiles. b) Pictorial representation of the TRIM calculation.
Figure 6.31 a) TRIM results for a 40 keV Xe implant, together with the Si vacancy
and interstitial depth profiles. b) Pictorial representation of the
calculation.
Figure 6.32 Illustration of proposed regrowth mechanism on SOI wafers.
Figure 7.1 MEIS energy spectra of Xe pre-amorphised Si samples, implanted with 1
and 3 keV BF2, before and after annealing at 1025 °C for 10s. The inset
shows the depth Xe depth profiles before and after annealing.
Figure 7.2 MEIS Xe depth profiles for Xe pre-amorphised Si samples, implanted
with 3 keV BF2 (top) and 1 keV BF2 + (bottom), as-implanted and after
different anneals.
Figure 7.3 TRIM depth profiles for B and F from 1 and 3 keV BF2 implants.
Figure 7.4 SIMS F depth profiles for 3 keV BF2 samples, as-implanted and after a
variety of anneals in a) PAI samples and b) non-PAI samples. The MEIS
profile in c) shows the non-PAI, 3 keV BF2 as-implanted profile.
Figure 7.5 1 keV SIMS profiles for a) PAI samples and b) non-PAI samples.
Figure 7.6 Combined MEIS Xe depth profiles and SIMS F depth profiles for Xe
pre-amorphised samples implanted with 3 keV BF2 (left) and 1 keV BF2
(right), as-implanted and after various anneals.
Figure 7.7 a) SIMS B depth profiles for Si implanted with 3 keV BF2 with and
without Xe pre-amorphisation, as-implanted, and after anneals of 600 °C
20mins, 1000 °C 5s and 1130 °C spike. b) B profiles from PAI samples
with the corresponding non PAI profile subtracted, showing the trapped
B.
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