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Damage formation and annealing studies of low energy ion implants ...

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Yield (couts per 5µC)<br />

300<br />

250<br />

200<br />

150<br />

100<br />

50<br />

0<br />

65 70 75 80 85 90 95 100<br />

300<br />

Energy (keV)<br />

250<br />

200<br />

150<br />

100<br />

50<br />

O<br />

As depth scale convers<strong>ion</strong><br />

183.2 - (2.44 x Energy) + (0.0052 x Energy 2 )<br />

Si<br />

0<br />

-10 0 10<br />

Depth (nm)<br />

20 30 40<br />

Figure 4.20 Example <strong>of</strong> convers<strong>ion</strong> from an <strong>energy</strong> scale (top) to a depth scale (bottom).<br />

Depth scales are specific to individual elements. For this example only the As peak (in red)<br />

is correctly converted. The rest <strong>of</strong> the spectrum (dashed line) is effectively meaningless.<br />

This depth scale calibrat<strong>ion</strong> method matches the physical reality more closely<br />

than the surface approximat<strong>ion</strong> method. For that reason it represents an improvement<br />

over the surface approximat<strong>ion</strong> method. However the level <strong>of</strong> difference between the<br />

two methods was seen to vary only by about 2-3% over a depth <strong>of</strong> 10 nm <strong>and</strong> this<br />

confirms the validity <strong>of</strong> the surface approximat<strong>ion</strong> method. A plot <strong>of</strong> a 3 keV As asimplanted<br />

is shown in Figure 4.21 calibrated by the surface approximat<strong>ion</strong> <strong>and</strong> depth<br />

scale program showing the comparatively small difference between the methods.<br />

94<br />

As<br />

Au

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