Damage formation and annealing studies of low energy ion implants ...

Figure 6.10 MEIS energy spectra for 3 keV As implants, as-implanted and after
annealing at 600 °C for various times. A random spectrum from an
amorphous sample is included in the figure. Depth scales have been
added to indicate scattering off As and Si atoms.
Figure 6.11 MEIS Si depth profiles (top), As depth profiles (bottom) and
approximate regrowth rates (centre).
Figure 6.12 As, Si and O depth profiles for the 3 keV As implanted samples, asimplanted
and following 600 °C annealing for different durations.
Figure 6.13 SIMS results for samples annealed at 600 °C for different durations.
Figure 6.14 Sheet resistance and activated dose for a 600 °C anneal with different
anneal durations.
Figure 6.15 100keV He MEIS energy spectra for the [111] blocking direction, for
3keV As 2E15 implanted samples annealed for 10s at 600 °C, 650 °C,
and 700 °C.
Figure 6.16 0.5 keV Cs + SIMS As depth profiles for the 3 keV implanted samples
annealed for 10s at 600 °C, 650 °C and 700 °C.
Figure 6.17 MEIS and SIMS combined depth profiles.
Figure 6.18 Sheet resistance and activated dose for 10 s annealing at different anneal
temperatures.
Figure 6.19 MEIS energy spectra for the Epi and Cz Si samples, implanted with 3
keV As, as-implanted and following various anneals.
Figure 6.20 Radial scan through (004) Bragg reflection for the Epi series and a virgin
sample.
Figure 6.21 a) Lattice parameter strain profile in the growth direction resulting from
the best fit. b) Static disorder depth profile resulting from the best fit.
Figure 6.22 Thickness of the regrown layer: comparison between MEIS and XRD
results. The constant off-set is due to the different definitions of the start
and points for the two techniques.
Figure 6.23 Comparison of MEIS depth profiles, with the strain profile from XRD
after rescaling of the depth.
Figure 6.24 MEIS energy spectra from bulk Si, 60 nm SOI and 100 nm SOI samples,
implanted with 3 keV As to a dose of 2E15 ions/cm 2 , as-implanted and
following annealing at 600 °C for 30s.
Figure 6.25 MEIS energy spectra from 60 nm SOI samples, pre amorphised with 40
keV Xe 1E14 cm -2 and implanted with 3 keV As to 1E15 cm -2 , annealed
at a) 550 °C, b) 600 °C, c) 650 °C, and d) higher temperatures.
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