Damage formation and annealing studies of low energy ion implants ...

4.2.2.3 Experimental output
As mentioned previously, by changing the voltage applied to the analyser and
piecing together separate data tiles a complete 2D yield with energy and scattering angle
spectrum is produced. An example is shown in Figure 4.15 which was taken from an As
implanted Si sample. The different colours represent different scattering yields. Taking
a cross section of the data along the angular axis produces the yield vs scattering angle
spectrum, as shown in the top right graph. There are two dips in the spectrum which
correspond to the [332] and [111] blocking directions. There is also a peak
corresponding to the O peak. Taking a cross section along the energy axis at the angles
of these blocking directions produces energy spectra of the [332] and [111] directions as
shown in the bottom graph.
Energy keV
As
Si
O
[332] [111]
Scattering angle θ
Yield
yield (per 5uC)
800
700
600
500
400
300
200
100
200
150
100
0
55 60 65 70 75
50
0
85
Angular scan
O
[332]
O
Scattering Angle
Energy spectrum
Si
[111]
As
332
111
140 150 160 170 180 190 200
Energy (keV)
Figure 4.15 MEIS 2D data output (left) of an As implanted Si sample. Indicated is the
position of the angular cut and the two cuts along the energy axis of the [332] and [111]
blocking dips. The corresponding angular spectrum is plotted in the top right of the figure
and the corresponding energy spectra are given in the bottom right of the figure.