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Damage formation and annealing studies of low energy ion implants ...

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Figure 4.14 Illustrat<strong>ion</strong> <strong>of</strong> the double alignment scattering configurat<strong>ion</strong> used in the MEIS<br />

experiments, showing the shadowing <strong>and</strong> blocking.<br />

Kinematic factor Depth resolut<strong>ion</strong> (nm)<br />

[332] – 60.5° [111] – 70.5° [332] [111]<br />

Au 0.9796 0.9732 0.42 0.50<br />

Xe 0.9695 0.9602 0.43 0.51<br />

Sb 0.9672 0.9571 0.43 0.51<br />

As 0.9472 0.9312 0.43 0.52<br />

Si 0.8643 0.8255 0.46 0.57<br />

F 0.8059 0.7527 0.49 0.61<br />

O 0.7731 0.7124 0.50 0.64<br />

B 0.6789 0.5991 0.55 0.73<br />

Table 4.1 Values <strong>of</strong> the kinematic factor for He <strong>ion</strong>s using the [īīı] direct<strong>ion</strong> on the inward<br />

path <strong>and</strong> the [332] <strong>and</strong> [111] direct<strong>ion</strong>s on the outward path. The corresponding depth<br />

resolut<strong>ion</strong>s are given for a 100 keV He.<br />

To align the sample to the beam along a crystallographic direct<strong>ion</strong>, angular scans<br />

across the three rotat<strong>ion</strong>al axes to find the posit<strong>ion</strong>s with the minimum scattering yield,<br />

have to be performed in a systematic sequential manner.<br />

The dose <strong>of</strong> the beam has to be chosen as a balance between achieving an<br />

adequate signal to noise ratio, <strong>and</strong> acceptable data collect<strong>ion</strong> times <strong>of</strong> the allocated beam<br />

time, so as to al<strong>low</strong> an adequate number <strong>of</strong> samples to be carried out. Beam damage to<br />

the Si needs to be minimised <strong>and</strong> so the sample would be moved after a set amount <strong>of</strong><br />

beam on target, to a fresh spot. For most samples analysed, the current integrator was<br />

set to acquire a dose corresponding to 5µC charge.<br />

84

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