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Damage formation and annealing studies of low energy ion implants ...

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cross sect<strong>ion</strong> has an E -2 dependence, the scattering yield is higher for <strong>low</strong>er beam<br />

energies. The sin -4 (θ/2) dependence shows that for smaller scattering angles there is a<br />

sharp increase in yield. The sensitivity <strong>of</strong> MEIS to detect B <strong>and</strong> F is such that it has not<br />

been possible to pr<strong>of</strong>ile B or F.<br />

Using a <strong>low</strong>er beam <strong>energy</strong> improves the depth resolut<strong>ion</strong> because <strong>of</strong> a smaller<br />

absolute <strong>energy</strong> error <strong>of</strong> the <strong>energy</strong> detector / analyser but as the stopping power is<br />

higher with higher beam <strong>energy</strong> over the range used, then peak overlap may be reduced<br />

using a higher beam <strong>energy</strong>. Figure 4.13 shows that higher masses have a higher<br />

kinematic factor. This determines the order that any peaks will appear in the <strong>energy</strong><br />

spectrum, but is not significant in terms <strong>of</strong> the choice <strong>of</strong> condit<strong>ion</strong>s.<br />

The condit<strong>ion</strong>s considered best for these <strong>studies</strong> was the use <strong>of</strong> a He + beam <strong>of</strong><br />

either 100 keV or 200 keV. The <strong>ion</strong>s were incident along the [ 1 1 1 ] channelling<br />

direct<strong>ion</strong> <strong>and</strong> the analyser posit<strong>ion</strong>ed to include the [111] <strong>and</strong> [332] blocking direct<strong>ion</strong>s.<br />

These direct<strong>ion</strong>s resulted in scattering angles <strong>of</strong> 70.5° <strong>and</strong> 60.5°, respectively, <strong>and</strong> are<br />

illustrated in Figure 4.14. These condit<strong>ion</strong>s are an optimum compromise between good<br />

<strong>energy</strong> <strong>and</strong> hence mass separat<strong>ion</strong> between the As <strong>and</strong> the Si peaks <strong>and</strong> depth resolut<strong>ion</strong>.<br />

They all result in sub-nm depth resolut<strong>ion</strong> <strong>and</strong> the detect<strong>ion</strong> <strong>of</strong> clear experimental<br />

blocking dips (17, 31). The [332] direct<strong>ion</strong> gives a better depth resolut<strong>ion</strong> but a<br />

decreased mass separat<strong>ion</strong> can cause a slight overlap <strong>of</strong> the silicon <strong>and</strong> arsenic peaks.<br />

With the [111] blocking direct<strong>ion</strong>, this peak overlap is <strong>of</strong>ten avoided. Values <strong>of</strong> the<br />

kinematic factor for the elements <strong>and</strong> scattering angles used in this study are given in<br />

Table 4.1 along with the depth resolut<strong>ion</strong> obtained.<br />

83

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