Damage formation and annealing studies of low energy ion implants ...

ecoil distributions and the As implant profile are shown for comparison.
The dose dependent peak position of the As implant is indicated by
arrows.
Figure 5.3 SIMS depth profiles taken under identical sputter erosion conditions, for
As implanted to a dose of 8 × 10 13 cm -2 into a virgin Si crystalline
sample and to doses of 5 × 10 13 cm -2 and 1 × 10 14 cm -2 into a self-ion preamorphised
Si sample. The TRIM calculated As profile is shown for
comparison.
Figure 5.4 MEIS energy spectra showing the growth of the Si damage and Sb
dopant yield as a function of fluence for 2 keV Sb + ion implantation into
virgin Si at room temperature.
Figure 5.5 Depth profiles of displaced Si and As implant atoms obtained from the
MEIS energy spectra in Figure 5.4. The TRIM calculated Si vacancy
distribution and As implant profile are shown for comparison. The dose
dependent peak position of the Sb implant is indicated by arrows.
Figure 6.1 200 keV He MEIS energy spectra for 2.5 keV 1.8E15 As implants, for
various anneal temperatures.
Figure 6.2 (Top) SIMS As depth profiles for 2.5 keV 1.8E15 As implants, for
various anneal temperatures. (Bottom) The same profiles are plotted with
a linear concentration scale and smaller depth range. The MEIS profile
from the as-implanted sample is included in the figure for comparison.
Figure 6.3 MEIS spectra collected along the [111] blocking direction. The nonimplanted
Si sample and a random amorphous Si spectrum are shown for
comparison.
Figure 6.4 MEIS depth profiles along the [111] blocking direction a) As depth
profiles for all the annealed samples. b) Si depth profiles for all the
annealed samples. c) Combined depth profile of As, Si and O for the PAI
1130 °C spike annealed sample.
Figure 6.5 SIMS As depth profiles of the 3keV 2E15 samples, with and without PAI,
as-implanted, and after 600C annealing and 1130C spike annealing.
Figure 6.6 a) Specular reflectivity curves for the PAI sample series and nonimplanted
Si with corresponding fits. b) Depth profile of the density as
derived from the fits.
Figure 6.7 MEIS energy spectra for 1 keV As implanted into crystalline Si
following various anneals.
Figure 6.8 Depth profiles for 1 keV As implants, PAI and NoPAI. a) As, b) Si, c) O.
d) combined profiles for the PAI 1025 °C 10s annealed sample.
Figure 6.9 SIMS profiles for 1 keV As implanted samples, as-implanted and
following various anneals.
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