Introduction to radiation-resistant semiconductor devices and circuits

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Radiation Effects 1. Ma, T.P. and Dressendorfer, P.V., Ionizing Radiation Effects in MOS Devices and Circuits (John Wiley & Sons, New York, 1989) TK7871.99.M44I56, ISBN 0-471-84893-X 2. Messenger, G.C. and Ash, M.S., The Effects of Radiation on Electronic Systems (van Nostrand Reinhold, New York, 1986) TK7870.M4425, ISBN 0- 442-25417-2 3. Srour, J.R. et al., Radiation Effects on and Dose Enhancement of Electronic Materials (Noyes Publications, Park Ridge, 1984) TK7870.R318, ISBN 0- 8155-1007-1 4. van Lint, V.A.J. et al., Mechanisms of Radiation Effects in Electronic Materials (John Wiley & Sons, New York, 1980) TK7871.M44, ISBN 0-471- 04106-8 Journals Most papers on radiation effects in semiconductor devices are presented at the IEEE Nuclear and Space Radiation Effects Conference and published in the annual conference issue (usually December) of the IEEE Transactions on Nuclear Science. Additional papers, primarily from the high energy physics community, are published in the Conference Record of the IEEE Nuclear Science Symposium and in the conference issue of the IEEE Transactions on Nuclear Science. Other conferences on detector instrumentation tend to publish their proceedings in Nuclear Instruments and Methods. Many of the new results on detectors (Si and GaAs) and low-noise front-ends appear as internal notes of the ATLAS and CMS collaborations in preparation for the LHC. REFERENCES 1. http://www-atlas.lbl.gov/strips/doc/tutorials.html 2. Messenger, G.C. and Ash, M.S., The Effects of Radiation on Electronic Systems (van Nostrand Reinhold, New York, 1986), p. 166 3. Burke E.A., “Energy Dependence of Proton-Induced Displacement Damage in Silicon,” IEEE Trans. Nucl. Sci. NS-33/6, 1276 (1986) 4. Van Ginneken A., “Non Ionizing Energy Deposition in Silicon for Radiation Damage Studies,” FNAL FN 522 (October, 1989) 28
5. Srour, J.R. et al., “Radiation Damage Coefficients for Silicon Depletion Regions,” IEEE Trans. Nucl. Sci. NS26/6, 4784 (1979) 6. Ma, T.P. and Dressendorfer, P.V., Ionizing Radiation Effects in MOS Devices and Circuits (John Wiley & Sons, New York, 1989) 7. Tsveybak, I. et al., “Fast Neutron-Induced Changes in Net Impurity Concentration of High-Resistivity Silicon,” IEEE Trans. Nucl. Sci. NS- 39/6, 1720-1729 (1992) 8. Barberis, E. et al., “Temperature effects on radiation damage to silicon detectors,” Nucl. Instr. and Meth. A326, 373-380 (1993) 9. Chilingarov, A. et al., “Radiation Hardness of the Silicon Counter Tracker (SCT) for ATLAS,” Proceedings of the 27th International Conference on High Energy Physics, Glasgow, July 20-27, 1994, contribution 0943 10. Sze, S.M., Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981), p. 90 11. Gill, K. et al., “Radiation damage by neutrons and photons to silicon detectors,” Nucl. Instr. and Meth. A322, 177 (1992) 12. Ohsugi, T. et al., “Radiation Damage in Silicon Microstrip Detectors,” Nucl. Instr. and Meth. A265, 105-111 (1988) 13. Li, Z., “Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectors,” Nucl. Instr. and Meth. A342, 105-118 (1994) 14. Pitzl, D. et al., “Type Inversion in Silicon Detectors,” Nucl. Instr. and Meth. A311, 98 (1992) 15. Giubellino, P. et al., “Study of the Effects of Neutron Irradiation on Silicon Strip Detectors,” Nucl. Instr. and Meth. A315, 156 (1992) 16. Matthews, J.A.J. et al., “Bulk Radiation Damage in Silicon Detectors and Implications for ATLAS SCT,” New Mexico Center for Particle Physics Note and ATLAS INDET-NO-118, 1995 17. Ziock, H.-J. et al., “Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors,” Nucl. Instr. and Meth. A342, 96-104 (1994) 29
Page 1 and 2: Introduction to Radiation-Resistant
Page 3 and 4: Both mechanisms are important in de
Page 5 and 6: electron from the conduction band (
Page 7 and 8: effects depend not only on the dose
Page 9 and 10: The effect of displacement damage o
Page 11 and 12: Typical parameter sets are k0 = (0.
Page 13 and 14: Since the probability of recombinat
Page 15 and 16: Junction Field Effect Transistors (
Page 17 and 18: g m / I d g m / I d 30 20 10 0 20 1
Page 19 and 20: Again, we see substantially less po
Page 21 and 22: equired performance characteristics
Page 23 and 24: contribution (in contrast to system
Page 25 and 26: DET. PREAMP TEST INPUT GAIN/SHAPER
Page 27: with the requirements of the milita
Page 31: 32. Citterio, M. et al., “A Study

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