Introduction to radiation-resistant semiconductor devices and circuits

Radiation Effects
1. Ma, T.P. and Dressendorfer, P.V., Ionizing Radiation Effects in MOS Devices
and Circuits (John Wiley & Sons, New York, 1989) TK7871.99.M44I56,
ISBN 0-471-84893-X
2. Messenger, G.C. and Ash, M.S., The Effects of Radiation on Electronic
Systems (van Nostrand Reinhold, New York, 1986) TK7870.M4425, ISBN 0-
442-25417-2
3. Srour, J.R. et al., Radiation Effects on and Dose Enhancement of Electronic
Materials (Noyes Publications, Park Ridge, 1984) TK7870.R318, ISBN 0-
8155-1007-1
4. van Lint, V.A.J. et al., Mechanisms of Radiation Effects in Electronic
Materials (John Wiley & Sons, New York, 1980) TK7871.M44, ISBN 0-471-
04106-8
Journals
Most papers on radiation effects in semiconductor devices are presented at the
IEEE Nuclear and Space Radiation Effects Conference and published in the annual
conference issue (usually December) of the IEEE Transactions on Nuclear
Science. Additional papers, primarily from the high energy physics community, are
published in the Conference Record of the IEEE Nuclear Science Symposium and
in the conference issue of the IEEE Transactions on Nuclear Science. Other
conferences on detector instrumentation tend to publish their proceedings in
Nuclear Instruments and Methods. Many of the new results on detectors (Si and
GaAs) and low-noise front-ends appear as internal notes of the ATLAS and CMS
collaborations in preparation for the LHC.
REFERENCES
1. http://www-atlas.lbl.gov/strips/doc/tutorials.html
2. Messenger, G.C. and Ash, M.S., The Effects of Radiation on Electronic
Systems (van Nostrand Reinhold, New York, 1986), p. 166
3. Burke E.A., “Energy Dependence of Proton-Induced Displacement Damage
in Silicon,” IEEE Trans. Nucl. Sci. NS-33/6, 1276 (1986)
4. Van Ginneken A., “Non Ionizing Energy Deposition in Silicon for Radiation
Damage Studies,” FNAL FN 522 (October, 1989)
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