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A SURVEY OF SEMICONDUCTOR DEVICES

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WHY Si (OVER OTHER <strong>SEMICONDUCTOR</strong>S)?<br />

NEAR-IDEAL <strong>SEMICONDUCTOR</strong>/OXIDE INTERFACE!<br />

BETTER CRYSTAL QUALITY THAN COMPOUND <strong>SEMICONDUCTOR</strong>S<br />

DISADVANTAGES<br />

INDIRECT ENERGY GAP => NO LIGHT SOURCE<br />

LESS FREEDOM IN HETEROEPITAXY<br />

SUBSTRATE NOT SEMI-INSULATING<br />

MOBILITY NOT AS HIGH<br />

33/39 K. Ng

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