A SURVEY OF SEMICONDUCTOR DEVICES
A SURVEY OF SEMICONDUCTOR DEVICES A SURVEY OF SEMICONDUCTOR DEVICES
1.Diodes Rectifiers Neg Resist N-shape S-shape Transit-Time 2.Resistive/Capacitive Devices 3.Transistors FET PET 4.Nonvolatile Memories 5.Thyristors and Power 6.Photonics Light Sources Photodetectors Bistable Opt Dev Others 7.Sensors 1. Resistor 2. MOS Capacitor 3. CCD Si C I V LOW F HI F VG OUT 20/39 K. Ng
S UNIPOLAR VS. BIPOLAR DEVICES 3-TERMINAL MOSFET JFET S G D n + n n + p + ENHANCEMENT JFET –Jn n “UNIPOLAR” “BIPOLAR” Jp J p p BIPOLAR (Junction trans) 2-TERMINAL SCHOTTKY p-n JUNCTION G D n + p n + MOSFET E B C n+ p n+ BIPOLAR TRANS (hole current is junk current) (Enh. JFET has forward-bias current) J n/J p = 10 3–10 4 J n/J p ≈ N D/N A ≈ 10 20/10 16 ≈ 10 4 –J n SCHOTTKY BARRIER p-n JUNCTION n + 21/39 K. Ng
- Page 1 and 2: IEEE EDS Distinguished Lecture A SU
- Page 3 and 4: BASIC ELECTRONIC COMPONENTS L -----
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- Page 7 and 8: HIGH POWER DISSIPATION LOW RELIABIL
- Page 9 and 10: WHY IS SEMICONDUCTOR USEFUL? SOLID
- Page 11 and 12: Examples: Some are device variation
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- Page 17 and 18: 1.Diodes Rectifiers Neg Resist N-sh
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- Page 33 and 34: WHY Si (OVER OTHER SEMICONDUCTORS)?
- Page 35 and 36: MAJOR DEVICE & CIRCUIT MILESTONES V
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- Page 39: CONCLUDING REMARKS • Identified ~
S<br />
UNIPOLAR VS. BIPOLAR <strong>DEVICES</strong><br />
3-TERMINAL MOSFET<br />
JFET<br />
S G D<br />
n + n n +<br />
p +<br />
ENHANCEMENT JFET<br />
–Jn<br />
n<br />
“UNIPOLAR” “BIPOLAR”<br />
Jp J p<br />
p<br />
BIPOLAR<br />
(Junction trans)<br />
2-TERMINAL SCHOTTKY p-n JUNCTION<br />
G<br />
D<br />
n + p n +<br />
MOSFET<br />
E B C<br />
n+ p n+<br />
BIPOLAR TRANS<br />
(hole current is junk current)<br />
(Enh. JFET has forward-bias current)<br />
J n/J p = 10 3–10 4 J n/J p ≈ N D/N A ≈ 10 20/10 16 ≈ 10 4<br />
–J n<br />
SCHOTTKY BARRIER p-n JUNCTION<br />
n +<br />
21/39 K. Ng
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