Design specific variation in pattern transfer by via/contact etch ...

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PD Dependency in Etch Processing - Microloading � Effect of the pattern density on etch is characterized by a specific correlation length depending on a particular process recipe � The correlation length provides the size of layout area which effects etching of a particular feature � Correlation length is in order of magnitude of the mean free path of the gas species - λ C. Hedlund, H. O. Blom, and S. Berg, “Microloading effect in reactive ion etching,” J. Vac. Sci. Technol. A 12, 1962–1965 (1994) Copyright ©2008, Mentor Graphics. 6
• Neutral radical generation • Consumption/reflection • Non-uniform concentration • Diffusion Main Factors of Microloading Reactive surface Wafer Copyright ©2008, Mentor Graphics. 7
Page 1 and 2: Design Design Design specific speci
Page 3 and 4: Etch Step in Pattern Transfer Simul
Page 5: Effects of Aspect Ratio & Microload
Page 9 and 10: Mass-balance Differential equation
Page 11 and 12: Radical Flux to the Feature � Whe
Page 13 and 14: Die-level analysis: Calculation of
Page 15 and 16: Thin & Thick Polymer Regimes T. Tat
Page 17 and 18: Approximation of “Thin Polymer”
Page 19 and 20: Etch Stop Condition � Etch stops
Page 21 and 22: VCE Input/Output Copyright ©2008,
Page 23 and 24: Calculation of Gas Kinetic Paramete
Page 25 and 26: Calibration Methodology � The maj
Page 27 and 28: VCE Capability Based on accurate ca
Page 29 and 30: VCE Capability Across-die etch hot-
Page 31 and 32: APPLICATIONS of VCE Copyright ©200
Page 33 and 34: Process-Aware Design Optimization v
Page 35 and 36: Process optimization • VCE predic
Page 37 and 38: F Concentration, mass fraction Redu
Page 39 and 40: Averaged pattern density R=1000µm
Page 41 and 42: OBSERVATION: FIB inspection of 0.26
Page 43 and 44: CF2 flux F flux SEMbar (1) in all01
Page 45 and 46: Calibration/Prediction - Resist Mod
Page 47 and 48: Calibration/Prediction - Main Etch
Page 49: Mentor Graphics Corp., San Jose, CA

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