Design specific variation in pattern transfer by via/contact etch ...

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Across-Die Distribution of Etch Stop Threshold Pattern density Probability of etch stop (ES) Above-threshold ES location � SEMbar1 and SEMbar2, which are identical regarding the local pattern density, are characterized by different radical flux distribution, that transfers into different post-etch feature profiles. � Radical flux variation in SEMbar is determined by the global pattern density distribution rather than the local one inside this segment of layout. � Calculated full-chip radical flux distributions suggest that the etch stop is more probable at the iso-via location than in SEMbar. � An accurate design/process optimization could be achieved only by analyzing test-chip design with Mentor-VCE tool. Copyright ©2008, Mentor Graphics.
Calibration/Prediction – Resist Model � CM1(Compact Model 1) is a Mentor Graphics resist model. It provides a dense simulation by considering acid and base neutralization, diffusion length during the exposure, baking, and resist development phases. � The output of the model is a resist contour obtained from the exposure threshold T : � Each term M i(I) is of the form: Simulated, nm 285 275 265 255 245 235 225 215 205 +/-b is the neutralization operator (+ for acid, - for base concentration), y = 0.80x + 43.77 R2 R = 0.805 2 = 0.805 195 195 205 215 225 235 245 255 265 275 285 Measured, nm M ( ) ) n ∑ci Mi I = k n 1/ ∇ I b ⊗Gs , p = ± CD, nm 300 280 260 240 220 200 180 ( ) T Measured Simulated 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 Via No. � Optical diameter = 2.56um � NA = 0.659 � Model is calibrated on BARC opening CD. � Result : R2 = 0.81 Copyright ©2008, Mentor Graphics.
Page 1 and 2: Design Design Design specific speci
Page 3 and 4: Etch Step in Pattern Transfer Simul
Page 5 and 6: Effects of Aspect Ratio & Microload
Page 7 and 8: • Neutral radical generation •
Page 9 and 10: Mass-balance Differential equation
Page 11 and 12: Radical Flux to the Feature � Whe
Page 13 and 14: Die-level analysis: Calculation of
Page 15 and 16: Thin & Thick Polymer Regimes T. Tat
Page 17 and 18: Approximation of “Thin Polymer”
Page 19 and 20: Etch Stop Condition � Etch stops
Page 21 and 22: VCE Input/Output Copyright ©2008,
Page 23 and 24: Calculation of Gas Kinetic Paramete
Page 25 and 26: Calibration Methodology � The maj
Page 27 and 28: VCE Capability Based on accurate ca
Page 29 and 30: VCE Capability Across-die etch hot-
Page 31 and 32: APPLICATIONS of VCE Copyright ©200
Page 33 and 34: Process-Aware Design Optimization v
Page 35 and 36: Process optimization • VCE predic
Page 37 and 38: F Concentration, mass fraction Redu
Page 39 and 40: Averaged pattern density R=1000µm
Page 41 and 42: OBSERVATION: FIB inspection of 0.26
Page 43: CF2 flux F flux SEMbar (1) in all01
Page 47 and 48: Calibration/Prediction - Main Etch
Page 49: Mentor Graphics Corp., San Jose, CA

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