Design specific variation in pattern transfer by via/contact etch ...

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Calibration Methodology � Allocate a number of vias/contacts not less than the number of model parameters. The best practice is to pick the features from the regions characterized by different pattern densities � Measure either etch rates, post-etch via depth, or CD for these features � Run the VCE and extract from the data-base the relative fluxes of all radicals coming to the measured features: γ ij � Run a optimization module to extract parameters values providing the best fit between calculated and measured characteristics. Calculated depths 184 180 176 172 R 2 = 0.9226 168 164 168 172 176 180 184 Measured depths Correlation of 92% was achieved for process node: 55 nm; test chip size of 25.2x30.7 mm (a) (b) Measured values (plotted by triangles) and calculated values (squares) of vias (a) with top diameter 110 nm, and (b) with top diameter 67 nm. Copyright ©2008, Mentor Graphics. 26
VCE Capability Based on accurate calculation of an across-die flux variation of radicals participating in etch reactions we can predict: Across-die etch rate variation Via 3 layer Via5 layer Copyright ©2008, Mentor Graphics. 27
Page 1 and 2: Design Design Design specific speci
Page 3 and 4: Etch Step in Pattern Transfer Simul
Page 5 and 6: Effects of Aspect Ratio & Microload
Page 7 and 8: • Neutral radical generation •
Page 9 and 10: Mass-balance Differential equation
Page 11 and 12: Radical Flux to the Feature � Whe
Page 13 and 14: Die-level analysis: Calculation of
Page 15 and 16: Thin & Thick Polymer Regimes T. Tat
Page 17 and 18: Approximation of “Thin Polymer”
Page 19 and 20: Etch Stop Condition � Etch stops
Page 21 and 22: VCE Input/Output Copyright ©2008,
Page 23 and 24: Calculation of Gas Kinetic Paramete
Page 25: Calibration Methodology � The maj
Page 29 and 30: VCE Capability Across-die etch hot-
Page 31 and 32: APPLICATIONS of VCE Copyright ©200
Page 33 and 34: Process-Aware Design Optimization v
Page 35 and 36: Process optimization • VCE predic
Page 37 and 38: F Concentration, mass fraction Redu
Page 39 and 40: Averaged pattern density R=1000µm
Page 41 and 42: OBSERVATION: FIB inspection of 0.26
Page 43 and 44: CF2 flux F flux SEMbar (1) in all01
Page 45 and 46: Calibration/Prediction - Resist Mod
Page 47 and 48: Calibration/Prediction - Main Etch
Page 49: Mentor Graphics Corp., San Jose, CA

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