Design specific variation in pattern transfer by via/contact etch ...

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Input/output to VCE tool - I VCE Input (process info): • Etchant radicals • Flux variation • Pressure • CD variation • Wall temperature • Etch rate variation • Etch depth var. Input (layout info): GDSII Copyright ©2008, Mentor Graphics. 22
Calculation of Gas Kinetic Parameters - Calculation of binary diffusivities σ + σ 2 D ij T ⎛ ⎜ 1 ⎜ ⎝ M i = 0. 0018583 2 Pσ ij i j A C E G Here σ ij = Ωij = + + + and * B * * * exp DT exp FT exp HT 3 1 + M * T , T = ( T ) ( ) ( ) ( ) , ε Ω ij ij j ⎞ ⎟ ⎠ ε ij = k B ε ε i j k k A = 1.06036, B = 0.15610, C = 0.193, D = 0.47635, E = 1.03587, F = 1.52996, G = 1.76474, H = 3.89411. Total gas pressure P in [atm], temperature T in [K] and cross-section σ σij in [A]. Parameters T* and Ω ij are dimensionless. The resulting binary diffusivities D ij are in [cm 2 s -1 ]. ( 1− x ) - Effective diffusivity of i-th radical in the gas mixture: i D xk is the mole fraction of i = the k-th component xk = 100 8RT ⎛ ⎜ 1 π ⎝ M 1 + M ∑ k ≠i Dik ij - Calculation of binary velocities ⎜ ⎟ . Velocities are in [cm/s]. ( ) 1− xi Effective velocities: ci = x and mean free path for i-th radical k c ∑ k ≠i ik c i j ⎞ ⎟ ⎠ D λi = 3 c Copyright ©2008, Mentor Graphics. i i B B 23
Page 1 and 2: Design Design Design specific speci
Page 3 and 4: Etch Step in Pattern Transfer Simul
Page 5 and 6: Effects of Aspect Ratio & Microload
Page 7 and 8: • Neutral radical generation •
Page 9 and 10: Mass-balance Differential equation
Page 11 and 12: Radical Flux to the Feature � Whe
Page 13 and 14: Die-level analysis: Calculation of
Page 15 and 16: Thin & Thick Polymer Regimes T. Tat
Page 17 and 18: Approximation of “Thin Polymer”
Page 19 and 20: Etch Stop Condition � Etch stops
Page 21: VCE Input/Output Copyright ©2008,
Page 25 and 26: Calibration Methodology � The maj
Page 27 and 28: VCE Capability Based on accurate ca
Page 29 and 30: VCE Capability Across-die etch hot-
Page 31 and 32: APPLICATIONS of VCE Copyright ©200
Page 33 and 34: Process-Aware Design Optimization v
Page 35 and 36: Process optimization • VCE predic
Page 37 and 38: F Concentration, mass fraction Redu
Page 39 and 40: Averaged pattern density R=1000µm
Page 41 and 42: OBSERVATION: FIB inspection of 0.26
Page 43 and 44: CF2 flux F flux SEMbar (1) in all01
Page 45 and 46: Calibration/Prediction - Resist Mod
Page 47 and 48: Calibration/Prediction - Main Etch
Page 49: Mentor Graphics Corp., San Jose, CA

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