Design specific variation in pattern transfer by via/contact etch ...

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VEB+ - based correlations x Normalized Etch Rate VCE 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 0.93 P=P3 fitt<strong>in</strong>g with theta_0 0.92 VCE4 0 200 400 600 800 1000 1200 1400 1600 1800 2000 1.02 1.00 0.98 0.96 0.94 0.92 Distance x from edge of the large open area [um] P1=0.005 Torr P2=0.02 P3=0.05 P4=0.1 VCE1 VCE2 VCE3 y = 1.1734x - 0.1695 R 2 = 0.9262 0.90 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1 1.01 Measurements VCE1 L<strong>in</strong>ear (VCE1) Copyright ©2008, Mentor Graphics. 20
VCE Input/Output Copyright ©2008, Mentor Graphics. 21
Page 1 and 2: Design Design Design specific speci
Page 3 and 4: Etch Step in Pattern Transfer Simul
Page 5 and 6: Effects of Aspect Ratio & Microload
Page 7 and 8: • Neutral radical generation •
Page 9 and 10: Mass-balance Differential equation
Page 11 and 12: Radical Flux to the Feature � Whe
Page 13 and 14: Die-level analysis: Calculation of
Page 15 and 16: Thin & Thick Polymer Regimes T. Tat
Page 17 and 18: Approximation of “Thin Polymer”
Page 19: Etch Stop Condition � Etch stops
Page 23 and 24: Calculation of Gas Kinetic Paramete
Page 25 and 26: Calibration Methodology � The maj
Page 27 and 28: VCE Capability Based on accurate ca
Page 29 and 30: VCE Capability Across-die etch hot-
Page 31 and 32: APPLICATIONS of VCE Copyright ©200
Page 33 and 34: Process-Aware Design Optimization v
Page 35 and 36: Process optimization • VCE predic
Page 37 and 38: F Concentration, mass fraction Redu
Page 39 and 40: Averaged pattern density R=1000µm
Page 41 and 42: OBSERVATION: FIB inspection of 0.26
Page 43 and 44: CF2 flux F flux SEMbar (1) in all01
Page 45 and 46: Calibration/Prediction - Resist Mod
Page 47 and 48: Calibration/Prediction - Main Etch
Page 49: Mentor Graphics Corp., San Jose, CA

Design specific variation in pattern transfer by via/contact etch ...

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