Design specific variation in pattern transfer by via/contact etch ...
Design specific variation in pattern transfer by via/contact etch ... Design specific variation in pattern transfer by via/contact etch ...
“Thick Polymer” Approximation Ion-energy transfer through polymer layer is a limiting step in SiO 2 etch rate MC H = ρS k ER = K etch C etch k Γ D CF2 ⎛ kDΓ ⎜ ⎜1− ⎝ ηΓi E CF2 ⎛ H ⎞ ηΓi E0⎜1− ⎟ = K ⎝ H * ⎠ 0 ⎛ ⎜ ⎜ k Γ k′ Γ R O D ⎜1− C ⎞ ⎜ ketch ηΓi E ⎟ ⎠ ⎜ ⎝ etch CF2 ⎛ kDΓ ⎜ ⎜1− ⎝ ηΓi E ⎛ ⎜ ⎜ µ MC ηΓi E0⎜1− 1 ⎜ 3 ⎜ E0 ρS k ⎝ 0 1 CF2 C etch 0 2 ⎞ ⎟ ⎠ ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ k′ DΓCF 2 ⎛ k′ DΓ ⎜ ⎜1− ⎝ ηΓi E CF2 0 ⎛ ⎜ ⎜ k Γ k′ Γ R O D ⎜1− C ⎞ ⎜ ketch ηΓi E ⎟ ⎠ ⎜ ⎝ CF2 0 1 ⎛ k′ DΓ ⎜ ⎜1− ⎝ ηΓi E Matsui, M., Tatsumi, T. and Sekine, M., “Relationship of etch reaction and reactive species flux in C4F8/Ar/O2 plasma for SiO2 selective etching over Si and Si3N4,” J. Vac. Sci. Technol. A 19, 2089-2096 (2001). CF2 0 2 ⎞ ⎟ ⎠ ⎞⎞ ⎟⎟ ⎟⎟ ⎟⎟ ⎟⎟ ⎟⎟ ⎠⎠ Copyright ©2008, Mentor Graphics. 18
Etch Stop Condition � Etch stops when ions lose all their energy while penetrating the C-F layer. A condition for the etch stop is follows: k′ D LE ( Γ ) k i R Γ O Γ CF 2 = ρS M C � Knowledge of distributions of ion-neutrals fluxes along the etched surface: allows to determine a regions where etch is completely stopped 1 3 E0 µ Γ ( , y), Γ ( x, y), Γ ( x, y) 2 i x CF O Copyright ©2008, Mentor Graphics. 19
- Page 1 and 2: Design Design Design specific speci
- Page 3 and 4: Etch Step in Pattern Transfer Simul
- Page 5 and 6: Effects of Aspect Ratio & Microload
- Page 7 and 8: • Neutral radical generation •
- Page 9 and 10: Mass-balance Differential equation
- Page 11 and 12: Radical Flux to the Feature � Whe
- Page 13 and 14: Die-level analysis: Calculation of
- Page 15 and 16: Thin & Thick Polymer Regimes T. Tat
- Page 17: Approximation of “Thin Polymer”
- Page 21 and 22: VCE Input/Output Copyright ©2008,
- Page 23 and 24: Calculation of Gas Kinetic Paramete
- Page 25 and 26: Calibration Methodology � The maj
- Page 27 and 28: VCE Capability Based on accurate ca
- Page 29 and 30: VCE Capability Across-die etch hot-
- Page 31 and 32: APPLICATIONS of VCE Copyright ©200
- Page 33 and 34: Process-Aware Design Optimization v
- Page 35 and 36: Process optimization • VCE predic
- Page 37 and 38: F Concentration, mass fraction Redu
- Page 39 and 40: Averaged pattern density R=1000µm
- Page 41 and 42: OBSERVATION: FIB inspection of 0.26
- Page 43 and 44: CF2 flux F flux SEMbar (1) in all01
- Page 45 and 46: Calibration/Prediction - Resist Mod
- Page 47 and 48: Calibration/Prediction - Main Etch
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“Thick Polymer” Approximation<br />
Ion-energy <strong>transfer</strong> through polymer layer is a limit<strong>in</strong>g step <strong>in</strong> SiO 2 <strong>etch</strong> rate<br />
MC<br />
H =<br />
ρS<br />
k<br />
ER = K<br />
<strong>etch</strong><br />
C<br />
<strong>etch</strong><br />
k<br />
Γ<br />
D CF2<br />
⎛ kDΓ<br />
⎜<br />
⎜1−<br />
⎝ ηΓi<br />
E<br />
CF2<br />
⎛ H ⎞<br />
ηΓi<br />
E0⎜1−<br />
⎟ = K<br />
⎝ H * ⎠<br />
0<br />
⎛<br />
⎜<br />
⎜ k Γ k′<br />
Γ<br />
R O D<br />
⎜1−<br />
C<br />
⎞ ⎜ k<strong>etch</strong><br />
ηΓi<br />
E<br />
⎟<br />
⎠<br />
⎜<br />
⎝<br />
<strong>etch</strong><br />
CF2<br />
⎛ kDΓ<br />
⎜<br />
⎜1−<br />
⎝ ηΓi<br />
E<br />
⎛<br />
⎜<br />
⎜ µ MC<br />
ηΓi<br />
E0⎜1−<br />
1<br />
⎜ 3<br />
⎜<br />
E0<br />
ρS<br />
k<br />
⎝<br />
0<br />
1<br />
CF2<br />
C<br />
<strong>etch</strong><br />
0<br />
2<br />
⎞<br />
⎟<br />
⎠<br />
⎞<br />
⎟<br />
⎟<br />
⎟<br />
⎟<br />
⎟<br />
⎠<br />
k′<br />
DΓCF<br />
2<br />
⎛ k′<br />
DΓ<br />
⎜<br />
⎜1−<br />
⎝ ηΓi<br />
E<br />
CF2<br />
0<br />
⎛<br />
⎜<br />
⎜ k Γ k′<br />
Γ<br />
R O D<br />
⎜1−<br />
C<br />
⎞ ⎜ k<strong>etch</strong><br />
ηΓi<br />
E<br />
⎟<br />
⎠<br />
⎜<br />
⎝<br />
CF2<br />
0<br />
1<br />
⎛ k′<br />
DΓ<br />
⎜<br />
⎜1−<br />
⎝ ηΓi<br />
E<br />
Matsui, M., Tatsumi, T. and Sek<strong>in</strong>e, M., “Relationship of <strong>etch</strong> reaction and reactive species flux <strong>in</strong> C4F8/Ar/O2 plasma for SiO2 selective <strong>etch</strong><strong>in</strong>g<br />
over Si and Si3N4,” J. Vac. Sci. Technol. A 19, 2089-2096 (2001).<br />
CF2<br />
0<br />
2<br />
⎞<br />
⎟<br />
⎠<br />
⎞⎞<br />
⎟⎟<br />
⎟⎟<br />
⎟⎟<br />
⎟⎟<br />
⎟⎟<br />
⎠⎠<br />
Copyright ©2008, Mentor Graphics.<br />
18
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